IHP10T120 datasheet(3/14 Pages) INFINEON

Nome de Peças	IHP10T120

Descrição Electrónicos	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

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IHP10T120

Soft Switching Series

Power Semiconductors

3

Rev. 2 Jun-04

Dynamic Characteristic

Input capacitance

Ciss

-

606

-

Output capacitance

Coss

-

48

-

Reverse transfer capacitance

Crss

VCE=25V,

VGE=0V,

f=1MHz

-

29

-

pF

Gate charge

QGate

VCC=960V, IC=10A

VGE=15V

-

53

-

nC

Internal emitter inductance

measured 5mm (0.197 in.) from case

LE

-

13

nH

Short circuit collector current

1)

IC(SC)

VGE=15V,tSC

≤10µs

VCC = 600V,

Tj = 25

°C

-

48

-

A

Switching Characteristic, Inductive Load, at Tj=25

°C

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

IGBT Characteristic

Turn-on delay time

td(on)

-

45

-

Rise time

tr

-

20

-

Turn-off delay time

td(off)

-

520

-

Fall time

tf

-

82

-

ns

Turn-on energy

Eon

-

0.68

-

Turn-off energy

Eoff

-

0.78

-

Total switching energy

Ets

Tj=25

°C,

VCC=610V,IC=10A,

VGE= 0/15V,

RG=81

Ω,

Lσ

2) =180nH,

Cσ

2) =39pF

Energy losses include

“tail” and diode

reverse recovery.

-

1.46

-

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time

trr

-

115

-

ns

Diode reverse recovery charge

Qrr

-

330

nC

Diode peak reverse recovery current

Irrm

Tj=25

°C,

VR=800V, IF=4A,

diF/dt=750A/

µs

-

7.15

A

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

2) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

Nº de peça semelhante - IHP10T120

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Infineon Technologies A...	IHP10T120	376Kb / 14P	Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Rev. 2.4 Sept. 07
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