MJE5731 datasheet(2/6 Pages) ONSEMI

Nome de Peças	MJE5731

Descrição Electrónicos	POWER TRANSISTORS PNP SILICON

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Fabricante Electrônico	ONSEMI [ON Semiconductor]

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MJE5730 MJE5731 MJE5731A

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0)

MJE5730

MJE5731

MJE5731A

VCEO(sus)

300

350

375

—

Vdc

Collector Cutoff Current

(VCE = 200 Vdc, IB = 0)

MJE5730

(VCE = 250 Vdc, IB = 0)

MJE5731

(VCE = 300 Vdc, IB = 0)

MJE5731A

ICEO

—

1.0

mAdc

Collector Cutoff Current

(VCE = 300 Vdc, VBE = 0)

MJE5730

(VCE = 350 Vdc, VBE = 0)

MJE5731

(VCE = 400 Vdc, VBE = 0)

MJE5731A

ICES

—

1.0

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

—

1.0

mAdc

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 0.3 Adc, VCE = 10 Vdc)

(IC = 1.0 Adc, VCE = 10 Vdc)

hFE

30

10

150

—

Collector–Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 0.2 Adc)

VCE(sat)

—

1.0

Vdc

Base–Emitter On Voltage

(IC = 1.0 Adc, VCE = 10 Vdc)

VBE(on)

—

1.5

Vdc

DYNAMIC CHARACTERISTICS

Current Gain — Bandwidth Product

(IC = 0.2 Adc, VCE = 10 Vdc, f = 2.0 MHz)

fT

10

—

MHz

Small–Signal Current Gain

(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

25

—

(1) Pulse Test: Pulse Width

v 300 µs, Duty Cycle v 2.0%.

TJ = 25°C

0.03

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

2.0

0.02 0.03

0.05

0.1

0.2

0.5

1.0

2.0

30

10

3.0

Figure 2. Collector–Emitter Saturation Voltage

0.02

IC, COLLECTOR CURRENT (AMPS)

0

0.05

0.3

1.2

5.0

VCE = 10 V

1.0

2.0

1.4

1

TJ = 150°C

20

0.5

0.3

0.8

0.6

0.1

VCE(sat)) @ IC/IB = 5.0

0.2

0.4

25

°C

–55

°C

100

50

200

150

°C

–55

°C

Nº de peça semelhante - MJE5731

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Motorola, Inc	MJE5731	190Kb / 6P	1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTS
ON Semiconductor	MJE5731	82Kb / 5P	High Voltage PNP Silicon Plastic Power Transistors February, 2006 ??Rev. 5
Inchange Semiconductor ...	MJE5731	264Kb / 2P	isc Silicon PNP Power Transistor
ON Semiconductor	MJE5731	82Kb / 6P	High Voltage PNP Silicon Plastic Power Transistors January, 2015 ??Rev. 8
Motorola, Inc	MJE5731A	190Kb / 6P	1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTS

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