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HM8840Q Folha de dados(PDF) 1 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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HM8840Q Folha de dados(HTML) 1 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
1 / 7 page 1. HM8840Q Dual N-Channel Enhancement-Mode MOSFET General Description Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Simple Drive Requirement Small Package Outline Surface Mount Device Features For a single MOSFET VDS = 20V RDS(ON) = 8.5mΩ @ VGS=4.5V Pin configurations See Diagram below TSSOP-8 DFN5X2 DFN3X3 Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 12 V Drain Current Continuous ID 10 A Pulsed 85 Total Power Dissipation @TA=25℃ PD 1.7 W Operating Junction Temperature Range TJ -55 to 150 ℃ HM |
Nº de peça semelhante - HM8840Q |
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Descrição semelhante - HM8840Q |
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