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AOD2908 Folha de dados(PDF) 2 Page - VBsemi Electronics Co.,Ltd

Nome de Peças. AOD2908
descrição  N-Channel 100-V (D-S) MOSFET
Download  8 Pages
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Fbricantes  VBSEMI [VBsemi Electronics Co.,Ltd]
Página de início  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

AOD2908 Folha de dados(HTML) 2 Page - VBsemi Electronics Co.,Ltd

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Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
100
V
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
13
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V
1
µA
VDS = 100 V, VGS = 0 V, TJ = 125 °C
50
VDS = 100 V, VGS = 0 V, TJ = 175 °C
250
On-State Drain Currenta
ID(on)
VDS = ≥ 5 V, VGS = 10 V
120
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 30 A
0.0075
0.010
Ω
VGS = 4.5 V, ID = 20 A
0.0095
0.012
VGS = 10 V, ID = 30 A, TJ = 125 °C
0.017
VGS = 10 V, ID = 30 A, TJ = 175 °C
0.022
Forward Transconductancea
gfs
VDS = 15 V, ID = 30 A
25
S
Dynamicb
Input Capacitance
Ciss
VGS = 0 V, VDS = 25 V, f = 1 MHz
4550
pF
Output Capacitance
Coss
565
Reverse Transfer Capacitance
Crss
205
Total Gate Chargec
Qg
VDS = 50 V, VGS = 10 V, ID = 85 A
105
160
nC
Gate-Source Chargec
Qgs
17
Gate-Drain Chargec
Qgd
23
Turn-On Delay Timec
td(on)
VDD = 50 V, RL = 0.6 Ω
ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω
12
25
ns
Rise Timec
tr
90
135
Turn-Off DelayTimec
td(off)
55
85
Fall Timec
tf
130
195
Source-Drain Diode Ratings and Characteristics TC = 25 °C
b
Continuous Current
IS
85
A
Pulsed Current
ISM
240
Forward Voltagea
VSD
IF = 85 A, VGS = 0 V
1.0
1.5
V
Reverse Recovery Time
trr
IF = 50 A, dI/dt = 100 A/µs
85
140
ns
Peak Reverse Recovery Current
IRM(REC)
4.5
7
A
Reverse Recovery Charge
Qrr
0.17
0.35
µC
AOD2908
2
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
2


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