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AOD2908 Folha de dados(PDF) 2 Page - VBsemi Electronics Co.,Ltd |
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AOD2908 Folha de dados(HTML) 2 Page - VBsemi Electronics Co.,Ltd |
2 / 8 page ![]() Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 100 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 13 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 1 µA VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 VDS = 100 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currenta ID(on) VDS = ≥ 5 V, VGS = 10 V 120 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 30 A 0.0075 0.010 Ω VGS = 4.5 V, ID = 20 A 0.0095 0.012 VGS = 10 V, ID = 30 A, TJ = 125 °C 0.017 VGS = 10 V, ID = 30 A, TJ = 175 °C 0.022 Forward Transconductancea gfs VDS = 15 V, ID = 30 A 25 S Dynamicb Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz 4550 pF Output Capacitance Coss 565 Reverse Transfer Capacitance Crss 205 Total Gate Chargec Qg VDS = 50 V, VGS = 10 V, ID = 85 A 105 160 nC Gate-Source Chargec Qgs 17 Gate-Drain Chargec Qgd 23 Turn-On Delay Timec td(on) VDD = 50 V, RL = 0.6 Ω ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω 12 25 ns Rise Timec tr 90 135 Turn-Off DelayTimec td(off) 55 85 Fall Timec tf 130 195 Source-Drain Diode Ratings and Characteristics TC = 25 °C b Continuous Current IS 85 A Pulsed Current ISM 240 Forward Voltagea VSD IF = 85 A, VGS = 0 V 1.0 1.5 V Reverse Recovery Time trr IF = 50 A, dI/dt = 100 A/µs 85 140 ns Peak Reverse Recovery Current IRM(REC) 4.5 7 A Reverse Recovery Charge Qrr 0.17 0.35 µC AOD2908 2 www.VBsemi.tw E-mail:China@VBsemi TEL:86-755-83251052 2 |
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