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AOD4142 Folha de dados(PDF) 1 Page - VBsemi Electronics Co.,Ltd |
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AOD4142 Folha de dados(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
1 / 6 page ![]() FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested N-Channel 20-V (D-S)175 _C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)a 20 0.006 @ VGS = 4.5 V 65 20 0.008 @ VGS = 2.5 V 45 D G S N-Channel MOSFET TO-252 S GD Top View Drain Connected to Tab ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS "15 V Continuous Drain Currenta TC = 25_C ID 65 Continuous Drain Currenta TC = 100_C ID 42 A Pulsed Drain Current IDM 200 A Continuous Source Current (Diode Conduction)a IS 65 Maximum Power Dissipation TC = 25_C PD 71 W Maximum Power Dissipation TA = 25_C PD 8.3b, c W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit b t v 10 sec. 15 18 Maximum Junction-to-Ambientb Steady State RthJA 40 50 _C/W Maximum Junction-to-Case RthJC 1.75 2.1 Notes a. Package Limited b. Surface Mounted on 1” x 1” FR4 Board c. t v 10 sec www.VBsemi.tw E-mail:China@VBsemi TEL:86-755-83251052 AOD4142 1 |
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