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AOD4142 Folha de dados(PDF) 2 Page - VBsemi Electronics Co.,Ltd

Nome de Peças. AOD4142
descrição  N-Channel 20-V (D-S)175 C MOSFET
Download  6 Pages
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Fbricantes  VBSEMI [VBsemi Electronics Co.,Ltd]
Página de início  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

AOD4142 Folha de dados(HTML) 2 Page - VBsemi Electronics Co.,Ltd

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SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
20
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
0.5
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "12 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V, TJ = 125_C
50
mA
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 4.5 V
65
A
VGS = 4.5 V, ID = 20 A
0.0045
0.006
Drain-Source On-State Resistanceb
rDS(on)
VGS = 4.5 V, ID = 20 A, TJ = 125_C
0.0055
0.007
W
DS(on)
VGS = 2.5 V, ID = 20 A
0.006
0.008
Forward Transconductanceb
gfs
VDS = 5 V, ID = 40 A
20
S
Dynamica
Input Capacitance
Ciss
3660
Output Capacitance
Coss
VGS = 0 V, VDS = 20 V, f = 1 MHz
730
pF
Reverse Transfer Capacitance
Crss
375
Total Gate Chargec
Qg
26
35
Gate-Source Chargec
Qgs
VDS = 10 V, VGS = 4.5 V, ID = 40 A
5
nC
Gate-Drain Chargec
Qgd
DS
, GS
, D
7
Gate Resistance
Rg
1
3.7
W
Turn-On Delay Timec
td(on)
20
35
Rise Timec
tr
VDD = 10 V, RL = 0.25 W
120
190
ns
Turn-Off Delay Timec
td(off)
VDD = 10 V, RL = 0.25 W
ID ^ 40 A, VGEN = 4.5 V, RG = 2.5 W
45
70
ns
Fall Timec
tf
20
35
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
100
A
Diode Forward Voltageb
VSD
IF = 100 A, VGS = 0 V
1.2
1.5
V
Source-Drain Reverse Recovery Time
trr
IF = 40 A, di/dt = 100 A/ms
35
70
ns
Notes
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
c.
Independent of operating temperature.
1.5
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
AOD4142
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