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AOD4286 Folha de dados(PDF) 2 Page - VBsemi Electronics Co.,Ltd

Nome de Peças. AOD4286
descrição  N-Channel 100 V (D-S) MOSFET
Download  7 Pages
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Fbricantes  VBSEMI [VBsemi Electronics Co.,Ltd]
Página de início  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

AOD4286 Folha de dados(HTML) 2 Page - VBsemi Electronics Co.,Ltd

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Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
 300 µs, duty cycle  2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
100
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V
1
µA
VDS = 100 V, VGS = 0 V, TJ = 125 °C
50
VDS = 100 V, VGS = 0 V, TJ = 175 °C
250
On-State Drain Currentb
ID(on)
VDS =5 V, VGS = 10 V
40
A
Drain-Source On-State Resistanceb
RDS(on)
VGS = 10 V, ID = 3 A
0.
VGS = 10 V, ID = 3 A, TJ = 125 °C
0.
VGS = 10 V, ID = 3 A, TJ = 175 °C
0.
140
VGS = 4.5 V ID = 3 A
0.
Forward Transconductanceb
gfs
VDS = 15 V, ID = 3 A
35
S
Dynamica
Input Capacitance
Ciss
VGS = 0 V, VDS = 25 V, F = 1 MHz
950
pF
Output Capacitance
Coss
120
Reverse Transfer Capacitance
Crss
60
Total Gate Chargec
Qg
VDS = 50 V, VGS = 10 V, ID = 3 A
24
41
nC
Gate-Source Chargec
Qgs
8
Gate-Drain Chargec
Qgd
12
Gate Resistance
Rg
0.5
2.9
Turn-On Delay Timec
td(on)
VDD = 50 V, RL = 5.2 Ω
ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω
15
25
ns
Rise Timec
tr
50
75
Turn-Off Delay Timec
td(off)
30
45
Fall Timec
tf
60
90
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)
Pulsed Current
ISM
5
A
Diode Forward Voltageb
VSD
IF = 3 A, VGS = 0 V
0.9
1.5
V
Source-Drain Reverse Recovery Time
trr
IF = 3 A, dI/dt = 100 A/µs
180
250
ns
114
1
20
1
20
1.0
2.5
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
AOD4286
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