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AOI407 Folha de dados(PDF) 2 Page - VBsemi Electronics Co.,Ltd

Nome de Peças. AOI407
descrição  P-Channel 40 V (D-S) MOSFET
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Fbricantes  VBSEMI [VBsemi Electronics Co.,Ltd]
Página de início  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

AOI407 Folha de dados(HTML) 2 Page - VBsemi Electronics Co.,Ltd

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Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 40
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 1.0
- 2.5
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 40 V, VGS = 0 V
- 1
µA
VDS = - 40 V, VGS = 0 V, TJ = 125 °C
- 50
VDS = - 40 V, VGS = 0 V, TJ = 175 °C
- 250
On-State Drain Currenta
ID(on)
VDS = -5 V, VGS = - 10 V
- 120
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 30 A
0.010
VGS = - 10 V, ID = - 30 A, TJ = 125 °C
0.016
VGS = - 10 V, ID = - 30 A, TJ = 175 °C
0.023
VGS = - 4.5 V, ID = - 20 A
0.014
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 75 A
20
S
Dynamicb
Input Capacitance
Ciss
VGS = 0 V, VDS = - 25 V, f = 1 MHz
3000
pF
Output Capacitance
Coss
620
Reversen Transfer Capacitance
Crss
315
Total Gate Chargec
Qg
VDS = - 15 V, VGS = - 10 V, ID = - 75 A
160
nC
Gate-Source Chargec
Qgs
32
Gate-Drain Chargec
Qgd
30
Turn-On Delay Timec
td(on)
VDD = - 15 V, RL = 0.2 
ID  - 75 A, VGEN = - 10 V, Rg = 2.5 
25
40
ns
Rise Timec
tr
225
360
Turn-Off Delay Timec
td(off)
150
240
Fall Timec
tf
210
340
Source-Drain Diode Ratings and Characteristicsb (TC = 25 °C)
Continuous Current
IS
-
A
Pulsed Current
ISM
- 240
Forward Voltagea
VSD
IF = - 75 A, VGS = 0 V
- 1.2
- 1.5
V
Reverse Recovery Time
trr
IF = - 75 A, dI/dt = 100 A/µs
55
100
ns
Peak Reverse Recovery Current
IRM(REC)
2.5
5
A
Reverse Recovery Charge
Qrr
0.07
0.25
µC
22
0
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
AOI407
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