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AOI407 Folha de dados(PDF) 2 Page - VBsemi Electronics Co.,Ltd |
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AOI407 Folha de dados(HTML) 2 Page - VBsemi Electronics Co.,Ltd |
2 / 7 page Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 40 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 2.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 40 V, VGS = 0 V - 1 µA VDS = - 40 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 40 V, VGS = 0 V, TJ = 175 °C - 250 On-State Drain Currenta ID(on) VDS = -5 V, VGS = - 10 V - 120 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 30 A 0.010 VGS = - 10 V, ID = - 30 A, TJ = 125 °C 0.016 VGS = - 10 V, ID = - 30 A, TJ = 175 °C 0.023 VGS = - 4.5 V, ID = - 20 A 0.014 Forward Transconductancea gfs VDS = - 15 V, ID = - 75 A 20 S Dynamicb Input Capacitance Ciss VGS = 0 V, VDS = - 25 V, f = 1 MHz 3000 pF Output Capacitance Coss 620 Reversen Transfer Capacitance Crss 315 Total Gate Chargec Qg VDS = - 15 V, VGS = - 10 V, ID = - 75 A 160 nC Gate-Source Chargec Qgs 32 Gate-Drain Chargec Qgd 30 Turn-On Delay Timec td(on) VDD = - 15 V, RL = 0.2 ID - 75 A, VGEN = - 10 V, Rg = 2.5 25 40 ns Rise Timec tr 225 360 Turn-Off Delay Timec td(off) 150 240 Fall Timec tf 210 340 Source-Drain Diode Ratings and Characteristicsb (TC = 25 °C) Continuous Current IS - A Pulsed Current ISM - 240 Forward Voltagea VSD IF = - 75 A, VGS = 0 V - 1.2 - 1.5 V Reverse Recovery Time trr IF = - 75 A, dI/dt = 100 A/µs 55 100 ns Peak Reverse Recovery Current IRM(REC) 2.5 5 A Reverse Recovery Charge Qrr 0.07 0.25 µC 22 0 www.VBsemi.tw E-mail:China@VBsemi TEL:86-755-83251052 AOI407 2 |
Nº de peça semelhante - AOI407 |
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Descrição semelhante - AOI407 |
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