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AM90N06-10P Folha de dados(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Nome de Peças AM90N06-10P
Descrição Electrónicos  N-Channel MOSFET uses advanced trench technology
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Fabricante Electrônico  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Página de início  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

AM90N06-10P Folha de dados(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Description：
This N-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
Features：
1) VDS=60V,ID=68 A,RDS(ON)<10mΩ@VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
Absolute Maximum Ratings：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID
Continuous Drain Current-TC=25℃
1
68
A
Continuous Drain Current-TC=100℃
---
Pulsed Drain Current
2
204
EAS
Single Pulse Avalanche Energy
4
91
mJ
PD
Power Dissipation,
TC=25℃
81
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
℃
Thermal Characteristics：
Symbol
Parameter
Max
Units
RƟJC
Thermal Resistance,Junction to Case
1.54
℃/W
RƟJA
Thermal Resistance,Junction to Ambient
5
62
D S
G
AM90N06-10P


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