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AM4512CE Folha de dados(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Nome de Peças AM4512CE
Descrição Electrónicos  P-Chanel and N-Channel MOSFET use advanced trench technology
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Fabricante Electrônico  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Página de início  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

AM4512CE Folha de dados(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Description：
This P-Chanel and N-Channel MOSFET use advanced trench technology
and design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
Features：
1) N-Channel: VDS=30V,ID=6.5A,RDS(ON)<30mΩ@VGS=10V
P-Channel: VDS=-30V,ID=-7A,RDS(ON)<33mΩ@VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
Absolute Maximum Ratings：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
N-Channel
P-Channel
Units
VDS
Drain-Source Voltage
30
-30
V
VGS
Gate-Source Voltage
±20
±20
V
ID
Continuous Drain Current
6.5
-7
A
Continuous Drain Current-TC=100℃
5.4
-5.8
Pulsed Drain Current
1
30
-30
EAS
Single Pulse Avalanche Energy
3
---
---
mJ
PD
Power Dissipation
4
2
2
W
TJ, TSTG
Operating and Storage Junction Temperature
Range
-55 to +150
℃
Thermal Characteristics：
Symbol
Parameter
Channel
Max
Units
RƟJA
Thermal Resistance,Junction to Ambient
2
N-Ch
62.5
℃/W
RƟJA
Thermal Resistance,Junction to Ambient
2
P-Ch
62.5
G2
D1
D1
D2
D2
S1
G1
S2
AM 4512CE


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