2SB950 datasheet(2/2 Pages) PANASONIC

Nome de Peças	2SB950

Descrição Electrónicos	Silicon PNP epitaxial planar type Darlington(For power amplification and switching)

Download	2 Pages

Scroll/Zoom	100%

Fabricante Electrônico	PANASONIC [Panasonic Semiconductor]

Página de início	http://www.panasonic.com/industrial/

Logo

2 / 2 page

2

Power Transistors

2SB950, 2SB950A

PC —Ta

IC —VCE

IC —VBE

VCE(sat) —IC

hFE —IC

Cob —VCB

Area of safe operation (ASO)

Rth(t) —t

0

160

40

120

80

140

20

100

60

0

50

40

30

20

10

(1) T

C=Ta

(2) With a 100

× 100 × 2mm

Al heat sink

(3) With a 50

× 50 × 2mm

Al heat sink

(4) Without heat sink

(P

C=2W)

(1)

(4)

(3)

(2)

Ambient temperature Ta (˚C)

0–5

–4

–1

–3

–2

0

–6

–5

–4

–3

–2

–1

T

C=25˚C

–2.5mA

–2.0mA

–1.5mA

–1.0mA

– 0.5mA

– 0.4mA

– 0.3mA

– 0.2mA

I

B=–3.0mA

Collector to emitter voltage V

CE

(V)

0

–3.2

– 0.8

–2.4

–1.6

0

–10

–8

–6

–4

–2

V

CE=–3V

25˚C

T

C=100˚C

–25˚C

Base to emitter voltage V

BE

(V)

– 0.01

– 0.1

–1

–10

– 0.03

– 0.3

–3

– 0.01

– 0.03

– 0.1

– 0.3

–1

–3

–10

–30

–100

I

C/IB=250

25˚C

T

C=100˚C

–25˚C

Collector current I

C

(A)

– 0.01

– 0.1

–1

–10

– 0.03

– 0.3

–3

102

103

104

105

106

V

CE=–3V

T

C=100˚C

25˚C

–25˚C

Collector current I

C

(A)

– 0.1

–1

–10

–100

– 0.3

–3

–30

1

3

10

30

100

300

1000

3000

10000

I

E=0

f=1MHz

T

C=25˚C

Collector to base voltage V

CB

(V)

–1

–10

–100

–1000

–3

–30

–300

– 0.01

– 0.03

– 0.1

– 0.3

–1

–3

–10

–30

–100

t=1ms

10ms

I

CP

I

C

Non repetitive pulse

T

C=25˚C

DC

Collector to emitter voltage V

CE

(V)

10–4

10

10–3

10–1

10–2

1103

102

104

10–2

10–1

1

10

103

102

(1)

(2)

(1) Without heat sink

(2) With a 100

× 100 × 2mm Al heat sink

Time t (s)

Nº de peça semelhante - 2SB950

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Panasonic Semiconductor	2SB950	75Kb / 3P	For Power Amplification And Switching
Panasonic Semiconductor	2SB950A	75Kb / 3P	For Power Amplification And Switching
Inchange Semiconductor ...	2SB950A	112Kb / 2P	isc Silicon PNP Darlington Power Transistor
New Jersey Semi-Conduct...	2SB950A	131Kb / 2P	Silicon PNP Darlington Power Transistor

More results

Descrição semelhante - 2SB950

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Panasonic Semiconductor	2SB938	64Kb / 2P	Silicon PNP epitaxial planar type Darlington(For power amplification and switching)
	2SB937	64Kb / 2P	Silicon PNP epitaxial planar type Darlington(For power amplification and switching)
	2SB1253	74Kb / 3P	Silicon PNP epitaxial planar type Darlington(For power amplification)
	2SB1254	74Kb / 3P	Silicon PNP epitaxial planar type Darlington(For power amplification)
	2SB1418	61Kb / 2P	Silicon PNP epitaxial planar type Darlington(For power amplification)
	2SB1255	74Kb / 3P	Silicon PNP epitaxial planar type Darlington(For power amplification)
	2SB1492	71Kb / 3P	Silicon PNP epitaxial planar type Darlington(For power amplification)
	2SB1252	75Kb / 3P	Silicon PNP epitaxial planar type Darlington(For power amplification)
	2SB1490	71Kb / 3P	Silicon PNP epitaxial planar type Darlington(For power amplification)
	2SB1503	70Kb / 3P	Silicon PNP epitaxial planar type Darlington(For power amplification)

More results

2SB950 Folha de dados(PDF) 2 Page - Panasonic Semiconductor

2SB950 Folha de dados(HTML) 2 Page - Panasonic Semiconductor

Nº de peça semelhante - 2SB950

Descrição semelhante - 2SB950

Html Pages

1 2

Folha de dados Download

Ligação URL