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2SC3930 Folha de dados(PDF) 1 Page - Panasonic Semiconductor

Nome de Peças 2SC3930
Descrição Electrónicos  Silicon NPN epitaxial planer type(For high-frequency amplification)
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Fabricante Electrônico  PANASONIC [Panasonic Semiconductor]
Página de início  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SC3930 Folha de dados(HTML) 1 Page - Panasonic Semiconductor

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1
Transistor
2SC3930
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1532
s Features
q
Optimum for RF amplification of FM/AM radios.
q
High transition frequency fT.
q
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
EIAJ:SC–70
3:Collector
S–Mini Type Package
2.1
±0.1
1.25
±0.1
0.425
0.425
1
3
2
0.2
±0.1
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
30
20
5
30
150
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Forward current transfer ratio
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer capacitance
Symbol
ICBO
hFE
*
fT
NF
Zrb
Cre
Conditions
VCB = 10V, IE = 0
VCB = 10V, IE = –1mA
VCB = 10V, IE = –1mA, f = 200MHz
VCB = 10V, IE = –1mA, f = 5MHz
VCB = 10V, IE = –1mA, f = 2MHz
VCE = 10V, IC = 1mA, f = 10.7MHz
min
70
150
typ
250
2.8
22
0.9
max
0.1
220
4
50
1.5
Unit
µA
MHz
dB
pF
Marking symbol :
V
*h
FE Rank classification
Rank
B
C
hFE
70 ~ 140
110 ~ 220
Marking Symbol
VB
VC


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