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FTK1N60P Folha de dados(PDF) 3 Page - First Silicon Co., Ltd |
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FTK1N60P Folha de dados(HTML) 3 Page - First Silicon Co., Ltd |
3 / 7 page 2017. 1. 28 3/7 Revision No : 0 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) VSD VGS = 0 V, IS = 1.0 A 1.5 V IS 1.0 A ISM 4.8 A tRR 200 ns QRR VGS = 0 V, IS = 1.0A, dIF/dt =100 A/µs (Note 4) 0.5 µC Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 120mH, IAS = 1.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 1.0A, di/dt ≤ 300A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 5. Essentially independent of operating temperature PARAMETER SYMBOL TEST CONDITIONS MIN TYP UNIT DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Reverse Recovery Time Reverse Recovery Charge MAX FTK1N60P / F / D / I / S |
Nº de peça semelhante - FTK1N60P |
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Descrição semelhante - FTK1N60P |
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