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SIHFR420TL-E3 Folha de dados(PDF) 2 Page - VBsemi Electronics Co.,Ltd |
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SIHFR420TL-E3 Folha de dados(HTML) 2 Page - VBsemi Electronics Co.,Ltd |
2 / 9 page Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. d. t = 60 s, f = 60 Hz. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -65 °C/W Maximum Junction-to-Case (Drain) RthJC -2.1 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 650 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mAd - 670 - mV/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.5 - 5.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 650 V, VGS = 0 V - - 25 µA VDS = 520 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 3.1 Ab - - Ω Forward Transconductance gfs VDS = 50 V, ID = 3.1 A 3.9 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1417 - pF Output Capacitance Coss - 177 - Reverse Transfer Capacitance Crss -7.0 - Output Capacitance Coss VGS = 0 V VDS = 1.0 V, f = 1.0 MHz - 1912 - VDS = 520 V, f = 1.0 MHz - 48 - Effective Output Capacitance Coss eff. VDS = 0 V to 520 Vc -84 - Total Gate Charge Qg VGS = 10 V ID = 3.2 A, VDS = 400 V see fig. 6 and 13b -- 48 nC Gate-Source Charge Qgs -- 12 Gate-Drain Charge Qgd -- 19 Turn-On Delay Time td(on) VDD = 325 V, ID = 3.2 A RG = 9.1 Ω, RD = 62 Ω, see fig. 10b -14 - ns Rise Time tr -20 - Turn-Off Delay Time td(off) -34 - Fall Time tf -18 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 4 A Pulsed Diode Forward Currenta ISM -- 21 Body Diode Voltage VSD TJ = 25 °C, IS = 3.2 A, VGS = 0 Vb -- 1.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µsb - 493 739 ns Body Diode Reverse Recovery Charge Qrr -2.1 3.2 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G 2.1 E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SIHFR420TL-E3 2 |
Nº de peça semelhante - SIHFR420TL-E3 |
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Descrição semelhante - SIHFR420TL-E3 |
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