Power MOSFET

ABSOLUTE MAXIMUM RATINGS

PARAMET

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 1)

4.4

A

4.0

A

Continuous Drain Current

2.2

Pulsed Drain Current (Note 1)

16

A

Single Pulse(Note 2)

150

mJ

Avalanche Energy

7.0

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.5

V/ns

106

W

Power Dissipation

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

UNIT

OFF CHARACTERISTICS

600

V

Drain-Source Breakdown Voltage

1

µ

A

Drain-Source Leakage Current

10

µ

A

Forward

100

nA

Gate-Source Leakage Current

Reverse

-100

nA

µ

A, Referenced to

25°C

0.7

V / ˚C

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Drain-Source On-State Resistance

2.5

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

520

pF

Output Capacitance

35

pF

Reverse Transfer Capacitance

f = 1.0MHz

7.5

pF

2008. 07. 10

2/7

FTK4N60P / F / D / I

Revision No : 1

-55 ~ +150

˚C

MAX

Storage Temperature

SWITCHING CHARACTERISTICS

Turn-On Delay Time

(Note 4,5)

ns

Turn-On Rise Time

42

ns

Turn-Off Fall Time

46

ns

Total Gate Charge

15

nC

Gate-Source Charge

(Note 4,5)

2.8

nC

Turn-Off Delay Time

Gate-Drain Charge

5.5

nC

Forward Transconductance

1.9

S

10

38

ns

Junction Temperature

+150

˚C

-55 ~ +150

˚C

Operating Temperature