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SM2518NUB Folha de dados(PDF) 1 Page - VBsemi Electronics Co.,Ltd

Nome de Peças. SM2518NUB
descrição  N-Channel 30-V (D-S) MOSFET
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Fbricantes  VBSEMI [VBsemi Electronics Co.,Ltd]
Página de início  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

SM2518NUB Folha de dados(HTML) 1 Page - VBsemi Electronics Co.,Ltd

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N-Channel 30-V (D-S) MOSFET
FEATURES
Halogen-free
TrenchFET® Gen III Power MOSFET
100 % Rg Tested
100 % UIS Tested
APPLICATIONS
DC/DC Conversion
- System Power
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
Qg (Typ.)
30
0.07 at VGS = 10 V
53
19 nC
0.09 at VGS= 4.5 V
48
N-Channel MOSFET
G
D
S
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
53
A
TC = 70 °C
41
TA = 25 °C
14b, c
TA = 70 °C
10 b, c
Pulsed Drain Current
IDM
165
Avalanche Current
L = 0.1 mH
IAS
25
Avalanche Energy
EAS
40
mJ
Continuous Source-Drain Diode Current
TC = 25 °C
IS
15
A
TA = 25 °C
2.9b, c
Maximum Power Dissipation
TC = 25 °C
PD
28
W
TC = 70 °C
18
TA = 25 °C
3.5b, c
TA = 70 °C
2.2b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t
≤ 10 s
RthJA
29
36
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
3.6
4.5
RoHS
COMPLIANT
TO-251
S
D
G
Top View
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
SM2518NUB
1


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