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SPN4920 Folha de dados(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Nome de Peças SPN4920
Descrição Electrónicos  Dual N-Channel MOSFET uses advanced trench technology
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Fabricante Electrônico  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Página de início  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SPN4920 Folha de dados(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Maximum Body-Diode Continuous Current
---
---
7
A
Notes:
Typical Characteristics： (T
C=25℃ unless otherwise noted)
2
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in
any given application depends on the user's specific board design.Surface Mounted on FR4 Board, t ≤ 10 sec. The current rating is based on the t ≤ 10s
thermal resistance rating.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to production.
Figure 1 Output Characteristics
Figure 1 Output Characteristics
Figure 2 Transfer Characteristics
ID- Drain Current (A)
Figure 3 Rdson- Drain Current
TJ-Junction Temperature(℃)
Figure 4 Rdson-JunctionTemperature
SPN4920


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