Os motores de busca de Datasheet de Componentes eletrônicos
  Portuguese  ▼

Delete All
ON OFF
ALLDATASHEETPT.COM

X  

Preview PDF Download HTML

BD77501G Folha de dados(PDF) 21 Page - Rohm

Nome de Peças BD77501G
Descrição Electrónicos  High Speed Ground Sense Excellent EMI Characteristics CMOS Operational Amplifier
Download  29 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrônico  ROHM [Rohm]
Página de início  http://www.rohm.com
Logo ROHM - Rohm

BD77501G Folha de dados(HTML) 21 Page - Rohm

Back Button BD77501G Datasheet HTML 17Page - Rohm BD77501G Datasheet HTML 18Page - Rohm BD77501G Datasheet HTML 19Page - Rohm BD77501G Datasheet HTML 20Page - Rohm BD77501G Datasheet HTML 21Page - Rohm BD77501G Datasheet HTML 22Page - Rohm BD77501G Datasheet HTML 23Page - Rohm BD77501G Datasheet HTML 24Page - Rohm BD77501G Datasheet HTML 25Page - Rohm Next Button
Zoom Inzoom in Zoom Outzoom out
 21 / 29 page
background image
21/26
BD77501G BD77502FVM BD77504FV
© 2019 ROHM Co., Ltd. All rights reserved.
30.Oct.2020 Rev.003
www.rohm.com
TSZ22111 • 15 • 001
TSZ02201-0GFG2G500010-1-2
Operational Notes – continued
10.
Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example, (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Figure 28. Example of Monolithic IC Structure
11.
Ceramic Capacitor
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
N
N
P
+
P
N
N
P
+
P Substrate
GND
N
P
+
N
N
P
+
N P
P Substrate
GND
GND
Parasitic
Elements
Pin A
Pin A
Pin B
Pin B
B
C
E
Parasitic
Elements
GND
Parasitic
Elements
C
B
E
Transistor (NPN)
Resistor
N Region
close-by
Parasitic
Elements


Html Pages

1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17  18  19  20  21  22  23  24  25  26  27  28  29 


Folha de dados Download

Go To PDF Page


Ligação URL




Privacy Policy
ALLDATASHEETPT.COM
ALLDATASHEET é útil para você?  [ DONATE ] 

Sobre Alldatasheet   |   Publicidade   |   Contato conosco   |   Privacy Policy   |   roca de Link   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn