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KM6161002BI-10 Folha de dados(PDF) 6 Page - Samsung semiconductor

Nome de Peças KM6161002BI-10
Descrição Electrónicos  64Kx16 Bit High Speed Static RAM(5.0V Operating), Revolutionary Pin out.
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Fabricante Electrônico  SAMSUNG [Samsung semiconductor]
Página de início  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

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KM6161002B, KM6161002BI
CMOS SRAM
Rev 2.0
- 6 -
February 1998
TIMING WAVEFORM OF WRITE CYCLE(1) (OE Clock)
Address
CS
UB, LB
WE
Data in
Data out
tWC
tCW(3)
tBW
tWP(2)
tAS(4)
tDH
tDW
tOHZ(6)
High-Z
High-Z
Valid Data
OE
tAW
tWR(5)
NOTES(READCYCLE)
1. WE is high for read cycle.
2. All read cycle timing is referenced from the last valid address to the first transition address.
3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to V OH or VOL
levels.
4. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to
device.
5. Transition is measured
±200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.
6. Device is continuously selected with CS=VIL.
7. Address valid prior to coincident with CS transition low.
8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycl e.
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
Valid Data
High-Z
tRC
CS
Address
UB, LB
OE
Data out
tHZ(3,4,5)
tAA
tCO
tBA
tOE
tOLZ
tLZ(4,5)
tOH
tOHZ
tBHZ(3,4,5)
tBLZ(4,5)


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