1

Power Transistors

2SD1750, 2SD1750A

Silicon NPN triple diffusion planar type Darlington

For midium speed power switching

Complementary to 2SB1180 and 2SB1180A

q

q

High-speed switching

q

I type package enabling direct soldering of the radiating fin to

the printed circuit board, etc. of small electronic equipment.

Parameter

Collector to

base voltage

Collector to

emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

Ratings

60

80

60

80

7

12

8

15

1.3

150

–55 to +150

Unit

V

V

V

A

A

W

˚C

˚C

2SD1750

2SD1750A

2SD1750

2SD1750A

Ta=25

°C

Parameter

Collector cutoff

current

Emitter cutoff current

Collector to emitter

voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

*

Conditions

min

60

80

2000

500

typ

20

0.5

4

1

max

100

100

2

10000

1.5

2

Unit

µA

mA

V

V

V

MHz

µs

µs

µs

2SD1750

2SD1750A

2SD1750

2SD1750A

Rank

Q

P

2000 to 5000 4000 to 10000

Internal Connection

B

E

C

Unit: mm

1:Base

2:Collector

3:Emitter

I Type Package

Unit: mm

1:Base

2:Collector

3:Emitter

I Type Package (Y)

7.0

±0.3

3.0

±0.2

3.5

±0.2

4.6

±0.4

2

13

1.1

±0.1

0.75

±0.1

2.3

±0.2

0.85

±0.1

0.4

±0.1

7.0

±0.3

0.75

±0.1

2.3

±0.2

4.6

±0.4

1.1

±0.1

2.0

±0.2

0.9

±0.1

3.5

±0.2

3.0

±0.2

123

0 to 0.15

0 to 0.15

2.5

0.5 max.