KM68V257C-17 datasheet(6/9 Pages) SAMSUNG

Nome de Peças	KM68V257C-17

Descrição Electrónicos	32Kx8 Bit High Speed Static RAM(3.3V Operating), Evolutionary Pin out.

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Fabricante Electrônico	SAMSUNG [Samsung semiconductor]

Página de início	http://www.samsung.com/Products/Semiconductor

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KM68V257C

CMOS SRAM

PRELIMINARY

Rev 3.0

- 6 -

February 1998

NOTES(READ CYCLE)

1. WE is high for read cycle.

2. All read cycle timing is referenced from the last valid address to the first transition address.

3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or VOL

levels.

4. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to

device.

5. Transition is measured

±200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.

6. Device is continuously selected with CS=VIL.

7. Address valid prior to coincident with CS transition low.

8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.

TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)

CS

Address

OE

Data out

tAA

tOLZ

tLZ(4,5)

tOH

tOHZ

tRC

tOE

tCO

tPU

tPD

Valid Data

tHZ(3,4,5)

50%

VCC

Current

ICC

ISB

TIMING WAVEFORM OF WRITE CYCLE(1) (OE= Clock)

Address

CS

tWP(2)

tDW

tDH

Valid Data

WE

Data in

Data out

tWC

tWR(5)

tAW

tCW(3)

High-Z(8)

High-Z

OE

tOHZ(6)

tAS(4)

Nº de peça semelhante - KM68V257C-17

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Samsung semiconductor	KM68V257E	184Kb / 8P	32Kx8 Bit High-Speed CMOS Static RAM (3.3V Operating)
	KM68V257E-12	184Kb / 8P	32Kx8 Bit High-Speed CMOS Static RAM (3.3V Operating)
	KM68V257E-15	184Kb / 8P	32Kx8 Bit High-Speed CMOS Static RAM (3.3V Operating)
	KM68V257E-20	184Kb / 8P	32Kx8 Bit High-Speed CMOS Static RAM (3.3V Operating)
	KM68V257EI	184Kb / 8P	32Kx8 Bit High-Speed CMOS Static RAM (3.3V Operating)

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Descrição semelhante - KM68V257C-17

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Samsung semiconductor	KM68257C	190Kb / 10P	32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range.
	KM68V257E	184Kb / 8P	32Kx8 Bit High-Speed CMOS Static RAM (3.3V Operating)
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	KM641001A	127Kb / 8P	256Kx 4 High Speed Static RAM(5V Operating), Evolutionary Pin Out Operated at Commercial Temperature Range
	K6R4016V1C-C	190Kb / 11P	256Kx16 Bit High Speed Static RAM(3.3V Operating)
	K6R4016V1D	227Kb / 12P	256Kx16 Bit High Speed Static RAM(3.3V Operating)
	K6R1004C1A	127Kb / 8P	256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out

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KM68V257C-17 Folha de dados(PDF) 6 Page - Samsung semiconductor

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