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KM68V257E-12 Folha de dados(PDF) 2 Page - Samsung semiconductor

Nome de Peças KM68V257E-12
Descrição Electrónicos  32Kx8 Bit High-Speed CMOS Static RAM (3.3V Operating)
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Fabricante Electrônico  SAMSUNG [Samsung semiconductor]
Página de início  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM68V257E-12 Folha de dados(HTML) 2 Page - Samsung semiconductor

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KM68V257E/EL, KM68V257EI/ELI
CMOS SRAM
Revision 0.0
- 2 -
August 1998
PIN FUNCTION
Pin Name
Pin Function
A0 - A14
Address Inputs
WE
Write Enable
CS
Chip Select
OE
Output Enable
I/O1 ~ I/O8
Data Inputs/Outputs
VCC
Power(+3.3V)
VSS
Ground
32K x 8 Bit High-Speed CMOS Static RAM (3.3V Operating)
The KM68V257E is a 262,144-bit high-speed Static Random
Access Memory organized as 32,768 words by 8 bits. The
KM68V257E uses 8 common input and output lines and has an
output enable pin which operates faster than address access
time at read cycle. The device is fabricated using SAMSUNG
′s
advanced CMOS process and designed for high-speed circuit
technology. It is particularly well suited for use in high-density
high-speed system applications. The KM68V257E is packaged
in a 300mil 28-pin plastic SOJ or TSOP1 forward.
GENERAL DESCRIPTION
FEATURES
• Fast Access Time 12,15,20ns(Max.)
• Low Power Dissipation
Standby (TTL)
: 20mA(Max.)
(CMOS) : 2.0mA(Max.)
0.5mA(Max.) L-ver. only
Operating KM68V257E - 12 : 70mA(Max.)
KM68V257E - 15 : 70mA(Max.)
KM68V257E - 20 : 70mA(Max.)
• Single 3.3
±0.3V Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• Standard Pin Configuration
KM68V257EJ
: 28-SOJ-300
KM68V257ETG : 28-TSOP1-0813, 4F
PIN CONFIGURATION(Top View)
FUNCTIONAL BLOCK DIAGRAM
SOJ
TSOP1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
OE
A11
A9
A8
A13
WE
Vcc
A14
A12
A7
A6
A5
A4
A3
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
Vss
I/O3
I/O2
I/O1
A0
A1
A2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
Vcc
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
KM68V257E -12/15/20
Commercial Temp.
KM68V257EI -12/15/20
Industrial Temp.
ORDERING INFORMATION
Clk Gen.
A0
I/O1~I/O8
CS
WE
OE
A1
A2
A3
A4
A5
A6
A7
A8
Data
Cont.
A9
A10
A11
A12
A13
A14
CLK
Gen.
Pre-Charge-Circuit
Memory Array
512 Rows
64x8 Columns
Column Select
I/O Circuit


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