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KM68V257E-12 Folha de dados(PDF) 2 Page - Samsung semiconductor |
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KM68V257E-12 Folha de dados(HTML) 2 Page - Samsung semiconductor |
2 / 8 page KM68V257E/EL, KM68V257EI/ELI CMOS SRAM Revision 0.0 - 2 - August 1998 PIN FUNCTION Pin Name Pin Function A0 - A14 Address Inputs WE Write Enable CS Chip Select OE Output Enable I/O1 ~ I/O8 Data Inputs/Outputs VCC Power(+3.3V) VSS Ground 32K x 8 Bit High-Speed CMOS Static RAM (3.3V Operating) The KM68V257E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The KM68V257E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG ′s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM68V257E is packaged in a 300mil 28-pin plastic SOJ or TSOP1 forward. GENERAL DESCRIPTION FEATURES • Fast Access Time 12,15,20ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 2.0mA(Max.) 0.5mA(Max.) L-ver. only Operating KM68V257E - 12 : 70mA(Max.) KM68V257E - 15 : 70mA(Max.) KM68V257E - 20 : 70mA(Max.) • Single 3.3 ±0.3V Power Supply • TTL Compatible Inputs and Outputs • Fully Static Operation - No Clock or Refresh required • Three State Outputs • Standard Pin Configuration KM68V257EJ : 28-SOJ-300 KM68V257ETG : 28-TSOP1-0813, 4F PIN CONFIGURATION(Top View) FUNCTIONAL BLOCK DIAGRAM SOJ TSOP1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 OE A11 A9 A8 A13 WE Vcc A14 A12 A7 A6 A5 A4 A3 A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 Vss I/O3 I/O2 I/O1 A0 A1 A2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss Vcc WE A13 A8 A9 A11 OE A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 KM68V257E -12/15/20 Commercial Temp. KM68V257EI -12/15/20 Industrial Temp. ORDERING INFORMATION Clk Gen. A0 I/O1~I/O8 CS WE OE A1 A2 A3 A4 A5 A6 A7 A8 Data Cont. A9 A10 A11 A12 A13 A14 CLK Gen. Pre-Charge-Circuit Memory Array 512 Rows 64x8 Columns Column Select I/O Circuit |
Nº de peça semelhante - KM68V257E-12 |
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Descrição semelhante - KM68V257E-12 |
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