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2SD1820A Folha de dados(PDF) 1 Page - Panasonic Semiconductor |
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2SD1820A Folha de dados(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Transistor 2SD1820, 2SD1820A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1219 and 2SB1219A s Features q Low collector to emitter saturation voltage VCE(sat). q S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Emitter EIAJ:SC–70 3:Collector S–Mini Type Package 2.1 ±0.1 1.25 ±0.1 0.425 0.425 1 3 2 0.2 ±0.1 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 30 60 25 50 5 1 500 150 150 –55 ~ +150 Unit V V V A mA mW ˚C ˚C 2SD1820 2SD1820A 2SD1820 2SD1820A s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO VCBO VCEO VEBO hFE1 *1 hFE2 VCE(sat) fT Cob Conditions VCB = 20V, IE = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA *2 VCE = 10V, IC = 500mA *2 IC = 300mA, IB = 30mA *2 VCB = 10V, IE = –50mA *2, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min 30 60 25 50 5 85 40 typ 160 0.35 200 6 max 0.1 340 0.6 15 Unit µA V V V V MHz pF *2 Pulse measurement 2SD1820 2SD1820A 2SD1820 2SD1820A *1h FE1 Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 2SD1820 WQ WR WS 2SD1820A XQ XR XS Marking symbol : W(2SD1820) X(2SD1820A) Marking Symbol |
Nº de peça semelhante - 2SD1820A |
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Descrição semelhante - 2SD1820A |
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