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2SD1975 Folha de dados(PDF) 1 Page - Panasonic Semiconductor

Nome de Peças 2SD1975
Descrição Electrónicos  Silicon NPN triple diffusion planar type(For high power amplification)
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Fabricante Electrônico  PANASONIC [Panasonic Semiconductor]
Página de início  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SD1975 Folha de dados(HTML) 1 Page - Panasonic Semiconductor

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1
Power Transistors
2SD1975, 2SD1975A
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1317 and 2SB1317A
s Features
q
Satisfactory foward current transfer ratio hFE collector current IC
characteristics
q
Wide area of safe operation (ASO)
q
High transition frequency fT
q
Optimum for the output stage of a HiFi audio amplifier
s Absolute Maximum Ratings (T
C=25˚C)
s Electrical Characteristics (T
C=25˚C)
Parameter
Collector cutoff
current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
*
hFE3
VBE
VCE(sat)
fT
Cob
Conditions
VCB = 180V, IE = 0
VCB = 200V, IE = 0
VEB = 3V, IC = 0
VCE = 5V, IC = 20mA
VCE = 5V, IC = 1A
VCE = 5V, IC = 8A
VCE = 5V, IC = 8A
IC = 10A, IB = 1A
VCE = 5V, IC = 0.5A, f = 1MHz
VCB = 10V, IE = 0, f = 1MHz
min
20
60
20
typ
20
200
max
50
50
50
200
1.8
2.5
Unit
µA
µA
V
V
MHz
pF
*h
FE2 Rank classification
Rank
Q
S
P
hFE2
60 to 120
80 to 160
100 to 200
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3L Package
20.0
±0.5
10.9
±0.5
123
2.0
±0.3
3.0
±0.3
1.0
±0.2
5.0
±0.3
3.0
5.45
±0.3
0.6
±0.2
1.5
2.7
±0.3
1.5
φ 3.3±0.2
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
180
200
180
200
5
25
15
150
3.5
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
2SD1975
2SD1975A
2SD1975
2SD1975A
TC=25°C
Ta=25
°C
2SD1975
2SD1975A


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