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FW341 Folha de dados(PDF) 1 Page - Sanyo Semicon Device |
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FW341 Folha de dados(HTML) 1 Page - Sanyo Semicon Device |
1 / 6 page FW341 No.7922-1/6 Features • Low ON-resistance. • Ultrahigh-speed switching. • Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage contained in a single package. • High-density mounting. • Best suited for motor drive application. Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 30 --30 V Gate-to-Source Voltage VGSS ±20 ±20 V Drain Current (DC) ID 3.5 --2.5 A Drain Current (PW ≤10s) ID duty cycle ≤1% 4 --3 A Drain Current (PW ≤100ms) ID duty cycle ≤1% 6 --4.5 A Drain Current (PW ≤10µs) IDP duty cycle ≤1% 14 --10 A Allowable Power Dissipation PD Mounted on a ceramic board 1.4 W (2000mm2!0.8mm)1unit Total Dissipation PT Mounted on a ceramic board 1.7 W (2000mm2!0.8mm) Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit [N-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 30 V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0 1 µA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0 ±10 µA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance yfs VDS=10V, ID=3.5A 3.0 5.3 S RDS(on)1 ID=3.5A, VGS=10V 64 84 m Ω Static Drain-to-Source On-State Resistance RDS(on)2 ID=1.8A, VGS=4V 105 150 m Ω Marking : W341 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : ENN7922 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. D2004 TS IM TA-100623 FW341 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications |
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