FW341

No.7922-1/6

Features

•

Low ON-resistance.

•

Ultrahigh-speed switching.

•

Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage

contained in a single package.

•

High-density mounting.

•

Best suited for motor drive application.

Specifications

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

N-channel

P-channel

Unit

Drain-to-Source Voltage

VDSS

30

--30

V

Gate-to-Source Voltage

VGSS

±20

±20

V

Drain Current (DC)

ID

3.5

--2.5

A

Drain Current (PW

≤10s)

ID

duty cycle

≤1%

4

--3

A

Drain Current (PW

≤100ms)

ID

duty cycle

≤1%

6

--4.5

A

Drain Current (PW

≤10µs)

IDP

duty cycle

≤1%

14

--10

A

Allowable Power Dissipation

PD

Mounted on a ceramic board

1.4

W

Total Dissipation

PT

Mounted on a ceramic board

1.7

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

[N-channel]

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0

30

V

Zero-Gate Voltage Drain Current

IDSS

VDS=30V, VGS=0

1

µA

Gate-to-Source Leakage Current

IGSS

VGS=±16V, VDS=0

±10

µA

Cutoff Voltage

VGS(off)

VDS=10V, ID=1mA

1.2

2.6

V

Forward Transfer Admittance

yfs

VDS=10V, ID=3.5A

3.0

5.3

S

RDS(on)1

ID=3.5A, VGS=10V

64

84

m

Ω

Static Drain-to-Source On-State Resistance

RDS(on)2

ID=1.8A, VGS=4V

105

150

m

Ω

Marking : W341

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN7922

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

D2004 TS IM TA-100623

FW341

N-Channel and P-Channel Silicon MOSFETs

General-Purpose Switching Device

Applications