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1PS10SB63 Folha de dados(PDF) 3 Page - NXP Semiconductors |
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1PS10SB63 Folha de dados(HTML) 3 Page - NXP Semiconductors |
3 / 7 page 2003 Aug 20 3 Philips Semiconductors Product specification Schottky barrier diode 1PS10SB63 ELECTRICAL CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: pulse width = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 µm copper strip line. Soldering Reflow soldering is the only recommended soldering method. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage see Fig.2 IF = 0.1 mA 160 200 mV IF = 1 mA 240 300 mV IR continuous reverse current see Fig.3 VR = 1 V 0.4 1 µA VR = 5 V; note 1 − 50 µA Cd diode capacitance VR = 0 V; f = 1 MHz; see Fig.4 0.35 0.5 pF LS series inductance 0.6 − nH SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W |
Nº de peça semelhante - 1PS10SB63 |
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Descrição semelhante - 1PS10SB63 |
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