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KM68B261A-8 Folha de dados(PDF) 5 Page - Samsung semiconductor

Nome de Peças KM68B261A-8
Descrição Electrónicos  32K x 8 Bit High-Speed BiCMOS Static RAM
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Fabricante Electrônico  SAMSUNG [Samsung semiconductor]
Página de início  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

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KM68B261A
BiCMOS SRAM
Rev 2.0
October-1994
5
TIMING DIAGRAMS
TIMING WAVE FORM OF READ CYCLE (/WE=VIH)
NOTES (READ CYCLE)
/WE is high for read cycle.
All read cycle timing is referenced from the last valid address to the first transition address.
tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not
referenced to VOH or VOL levels.
At any given temperature and voltage condition, tHZ(max.) is less than tLZ(min.) both for a given device and
from device to device.
Transition is measured ± 200mV from steady state voltage with Load(B). This parameter is sampled and not
100% tested.
Device is continuously selected with /CS=VIL
Address valid prior to coincident with /CS transition low.
For common I/O applications, minimization or elimination of bus contention conditions is necessary during read
and write cycle.
Address
/CS
/OE
Data Out
Data Valid
High-Z
tCO
tOH
tRC
tAA
tOE
tOLZ
t LZ (4,5)
tOHZ
t HZ(3,4,5)
1.
2.
3.
4.
5.
6.
7.
8.
Address
/CS
/WE
Data In
TIMING WAVE FORM OF WRITE CYCLE(1) (/OE=Clock)
High-Z
tCW(3)
tDH
tRC
tAW
Data Valid
t WP(2)
t WR(5)
tOW
High-Z(8)
tOHZ(6)
tAS(4)
tDW
/OE
Data Out


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