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GS74116TP-8I Folha de dados(PDF) 7 Page - GSI Technology |
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GS74116TP-8I Folha de dados(HTML) 7 Page - GSI Technology |
7 / 14 page Rev: 2.02 3/2000 7/14 © 1999, Giga Semiconductor, Inc. Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. N GS74116TP/J/U Read Cycle 2: WE = VIH * These parameters are sampled and are not 100% tested Write Cycle Parameter Symbol -8 -10 -12 -15 Unit Min Max Min Max Min Max Min Max Write cycle time tWC 8 --- 10 --- 12 --- 15 --- ns Address valid to end of write tAW 5.5 --- 7 --- 8 --- 10 --- ns Chip enable to end of write tCW 5.5 --- 7 --- 8 --- 10 --- ns Byte enable to end of write tBW 5.5 --- 7 --- 8 --- 10 --- ns Data set up time tDW 4 --- 5 --- 6 --- 7 --- ns Data hold time tDH 0 --- 0 --- 0 --- 0 --- ns Write pulse width tWP 5.5 --- 7 --- 8 --- 10 --- ns Address set up time tAS 0 --- 0 --- 0 --- 0 --- ns Write recovery time (WE) tWR 0 --- 0 --- 0 --- 0 --- ns Write recovery time (CE) tWR1 0 --- 0 --- 0 --- 0 --- ns Output Low Z from end of write tWLZ* 3 --- 3 --- 3 --- 3 --- ns Write to output in High Z tWHZ* --- 3.5 --- 4 --- 5 --- 6 ns tAA tRC Address tAC tLZ tAB tBLZ tOE tOLZ CE UB, LB OE Data Out tHZ tBHZ tOHZ Data valid High impedance |
Nº de peça semelhante - GS74116TP-8I |
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Descrição semelhante - GS74116TP-8I |
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