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FDD5810 Folha de dados(PDF) 1 Page - Fairchild Semiconductor |
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FDD5810 Folha de dados(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page ©2006 Fairchild Semiconductor Corporation FDD5810 Rev. A (W) January 2006 www.fairchildsemi.com 1 FDD5810 N-Channel PowerTrench® MOSFET 60V, 35A, 27m Ω Features RDS(ON) = 20.5mΩ (Typ.), VGS = 5V, ID = 35A Qg(5) = 13nC (Typ.), VGS = 5V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse / Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant Applications Motor / Body Load Control ABS Systems Powertrain Management Injection System DC-DC converters and Off-line UPS Distributed Power Architecture and VRMs Primary Switch for 12V and 24V systems G S D TO-252 D-PAK (TO-252) D G S A D F R E E I |
Nº de peça semelhante - FDD5810 |
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Descrição semelhante - FDD5810 |
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