TPC6602 datasheet(1/5 Pages) TOSHIBA

Nome de Peças	TPC6602

Descrição Electrónicos	TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE

Download	5 Pages

Scroll/Zoom	100%

Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

Logo

1 / 5 page

TPC6602

2002-03-18

1

TOSHIBA Transistor Silicon PNP Epitaxial Type

TPC6602

High-Speed Switching Applications

DC-DC Converter Applications

Strobe Applications

· High DC current gain: hFE = 200 to 500 (IC = −0.2 A)

· Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)

· High-speed switching: tf = 25 ns (typ.)

Maximum Ratings (Ta

==== 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

-20

V

Collector-emitter voltage

VCEO

-10

V

Emitter-base voltage

VEBO

-7

V

DC

IC

-2.0

Collector current

Pulse

ICP

-3.5

A

Base current

IB

-200

mA

t

= 10 s

1.6

Collector power

dissipation

DC

PC

(Note)

0.8

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

-55~150

°C

Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645

mm

2

)

Electrical Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = -20 V, IE = 0

¾

-100

nA

Emitter cut-off current

IEBO

VEB = -7 V, IC = 0

¾

-100

nA

Collector-emitter breakdown voltage

V (BR) CEO

IC = -10 mA, IB = 0

-10

¾

V

hFE (1)

VCE = -2 V, IC = -0.2 A

200

¾

500

DC current gain

hFE (2)

VCE = -2 V, IC = -0.6 A

125

¾

Collector-emitter saturation voltage

VCE (sat)

IC = -0.6 A, IB = -0.02 A

¾

-0.19

V

Base-emitter saturation voltage

VBE (sat)

IC = -0.6 A, IB = -0.02 A

¾

-1.10

V

Collector output capacitance

Cob

VCB = -10 V, IE = 0, f = 1 MHz

¾

12

¾

pF

Rise time

tr

¾

50

¾

Storage time

tstg

¾

115

¾

Switching time

Fall time

tf

See Figure 1 circuit diagram.

VCC ~- -6 V, RL = 10 W

IB1 = -IB2 = -20 mA

¾

25

¾

ns

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3T1

Weight: 0.011 g (typ.)

Nº de peça semelhante - TPC6602

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Toshiba Semiconductor	TPC6602	157Kb / 5P	High-Speed Switching Applications
	TPC6602	1Mb / 73P	Bipolar Small-Signal Transistors
	TPC6602	157Kb / 5P	High-Speed Switching Applications

More results

Descrição semelhante - TPC6602

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Toshiba Semiconductor	2SA2058	196Kb / 5P	TOSHIBA Transistor Silicon PNP Epitaxial Type
	2SA2070	134Kb / 5P	TOSHIBA Transistor Silicon PNP Epitaxial Type
	2SA2065	135Kb / 5P	TOSHIBA Transistor Silicon PNP Epitaxial Type
	2SA2056	191Kb / 5P	TOSHIBA Transistor Silicon PNP Epitaxial Type
	TMBT3906	208Kb / 5P	TOSHIBA Transistor Silicon PNP Epitaxial Type 2018-05-17
	RN47A5	94Kb / 4P	TOSHIBA Transistor Silicon NPN PNP Epitaxial Type
	RN2907	188Kb / 5P	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
	RN2108	177Kb / 6P	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
	RN2910	177Kb / 6P	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
	2SA1618-GR	214Kb / 4P	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

More results

TPC6602 Folha de dados(PDF) 1 Page - Toshiba Semiconductor

TPC6602 Folha de dados(HTML) 1 Page - Toshiba Semiconductor

Nº de peça semelhante - TPC6602

Descrição semelhante - TPC6602

Html Pages

1 2 3 4 5

Folha de dados Download

Ligação URL