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TPC6602 Folha de dados(PDF) 1 Page - Toshiba Semiconductor |
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TPC6602 Folha de dados(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page TPC6602 2002-03-18 1 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6602 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications · High DC current gain: hFE = 200 to 500 (IC = −0.2 A) · Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max) · High-speed switching: tf = 25 ns (typ.) Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -10 V Emitter-base voltage VEBO -7 V DC IC -2.0 Collector current Pulse ICP -3.5 A Base current IB -200 mA t = 10 s 1.6 Collector power dissipation DC PC (Note) 0.8 W Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 2 ) Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -20 V, IE = 0 ¾ ¾ -100 nA Emitter cut-off current IEBO VEB = -7 V, IC = 0 ¾ ¾ -100 nA Collector-emitter breakdown voltage V (BR) CEO IC = -10 mA, IB = 0 -10 ¾ ¾ V hFE (1) VCE = -2 V, IC = -0.2 A 200 ¾ 500 DC current gain hFE (2) VCE = -2 V, IC = -0.6 A 125 ¾ ¾ Collector-emitter saturation voltage VCE (sat) IC = -0.6 A, IB = -0.02 A ¾ ¾ -0.19 V Base-emitter saturation voltage VBE (sat) IC = -0.6 A, IB = -0.02 A ¾ ¾ -1.10 V Collector output capacitance Cob VCB = -10 V, IE = 0, f = 1 MHz ¾ 12 ¾ pF Rise time tr ¾ 50 ¾ Storage time tstg ¾ 115 ¾ Switching time Fall time tf See Figure 1 circuit diagram. VCC ~- -6 V, RL = 10 W IB1 = -IB2 = -20 mA ¾ 25 ¾ ns Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3T1 Weight: 0.011 g (typ.) |
Nº de peça semelhante - TPC6602 |
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Descrição semelhante - TPC6602 |
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