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BTA1640FP Folha de dados(PDF) 1 Page - Cystech Electonics Corp. |
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BTA1640FP Folha de dados(HTML) 1 Page - Cystech Electonics Corp. |
1 / 4 page CYStech Electronics Corp. Spec. No. : C657FP Issued Date : 2004.09.01 Revised Date :2004.09.28 Page No. : 1/4 BTA1640FP CYStek Product Specification PNP Epitaxial Planar Power Transistor BTA1640FP Features • Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.1A • Excellent current gain linearity Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Collector Current (DC) IC -7 Collector Current (Pulse) ICP -10 (Note 1) A Power Dissipation @ TA=25℃ PD 2 Power Dissipation @ TC=25℃ PD 40 W Thermal Resistance, Junction to Ambient RθJA 62.5 °C/W Thermal Resistance, Junction to Case RθJC 3.125 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : 1. Single Pulse , Pw≦380µs, Duty≦2%. BTA1640FP TO-220FP B:Base C:Collector E:Emitter B C E |
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