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SI4910DY Folha de dados(PDF) 2 Page - Vaishali Semiconductor |
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SI4910DY Folha de dados(HTML) 2 Page - Vaishali Semiconductor |
2 / 3 page Vishay Siliconix SPICE Device Model Si4910DY SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.2 V On-State Drain Current a ID(on) VDS ≥ 5 V, VGS = 10 V 224 A VGS = 10 V, ID = 6 A 0.021 0.022 Drain-Source On-State Resistance a rDS(on) VGS = 4.5 V, ID = 4.8 A 0.026 0.026 Ω Forward Transconductance a gfs VDS = 15 V, ID = 6 A 17 20 S Forward Voltage a VSD IS = 1.5 A 0.83 0.73 V Dynamic b Input Capacitance Ciss 1085 855 Output Capacitance Coss 111 105 Reverse Transfer Capacitance Crss VDS = 20 V, VGS = 0 V, f = 1 MHz 58 65 pF VDS = 20 V, VGS = 10 V, ID = 5 A 17 21 Total Gate Charge Qg 9 9.6 Gate-Source Charge Qgs 2.3 2.3 Gate-Drain Charge Qgd VDS = 20 V, VGS = 4.5 V, ID = 5 A 3.2 3.2 nC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 74168 S-60411 Rev. A, 20-Mar-06 |
Nº de peça semelhante - SI4910DY |
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Descrição semelhante - SI4910DY |
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