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SS24 Datasheet(Folha de dados) 4 Page - ON Semiconductor

Nome de Peças. SS24
descrição  Surface Mount Schottky Power Rectifier
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Fbricantes  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
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SS22, SS24
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4
Figure 7. Capacitance
Figure 8. Typical Operating Temperature Derating*
Figure 9. Thermal Response — Junction to Case
Figure 10. Thermal Response — Junction to Ambient
30
0
VR, REVERSE VOLTAGE (VOLTS)
1000
100
10
VR, DC REVERSE VOLTAGE (VOLTS)
25
40
0
105
85
75
65
15
5.0
10
20
25
35
40
30
35
5.0
10
20
15
95
115
125
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation:
TJ = TJmax − r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
Rtja = 24°C/W
43°C/W
63°C/W
80°C/W
93°C/W
TJ = 25°C
0.1
0.00001
t, TIME (s)
1.0E+00
1.0E−01
1.0E−02
1.0E−03
1.0E−04
0.0001
0.001
0.01
1.0
10
100
1000
50%
20%
10%
5.0%
2.0%
1.0%
Rtjl(t) = Rtjl*r(t)
0.1
0.00001
t, TIME (s)
1.0E+00
1.0E−01
1.0E−02
1.0E−03
1.0E−04
0.0001
0.001
0.01
1.0
10
100
1000
50%
20%
10%
5.0%
2.0%
1.0%
Rtjl(t) = Rtjl*r(t)




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