SI7806BDN datasheet(3/6 Pages) VISHAY

Nome de Peças	SI7806BDN

Descrição Electrónicos	N-Channel 30-V (D-S) Fast Switching MOSFET

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Document Number: 73081

S-60790-Rev. B, 08-May-06

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Vishay Siliconix

Si7806BDN

TYPICAL CHARACTERISTICS

25 °C unless noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

0.000

0.005

0.010

0.015

0.020

0.025

0.030

0.035

0.040

0

5

10

15

20

25

30

35

40

ID − Drain Current (A)

VGS = 4.5 V

VGS = 10 V

0

2

4

6

8

10

04

8

12

16

20

VDS = 15 V

ID = 12.6 A

Qg − Total Gate Charge (nC)

VSD − Source-to-Drain Voltage (V)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 25 °C

50

10

1

TJ = 150 °C

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

200

400

600

800

1000

1200

1400

0

5

10

15

20

25

30

Crss

Coss

Ciss

VDS − Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

0

25

50

75

100

125

150

VGS = 10 V

ID = 12.6 A

TJ − Junction Temperature (°C)

0.000

0.005

0.010

0.015

0.020

0.025

0.030

02

4

6

8

10

VGS − Gate-to-Source Voltage (V)

ID = 2 A

ID = 12.6 A

Nº de peça semelhante - SI7806BDN

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Descrição semelhante - SI7806BDN

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