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TPCS8303 Folha de dados(PDF) 3 Page - Toshiba Semiconductor |
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TPCS8303 Folha de dados(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPCS8303 2004-07-06 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cut-OFF current IDSS VDS = −20 V, VGS = 0 V ⎯ ⎯ −10 µA V (BR) DSS ID = −10 mA, VGS = 0 V −20 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = −10 mA, VGS = 12 V −8 ⎯ ⎯ V Gate threshold voltage Vth VDS = −10 V, ID = −200 µA −0.45 ⎯ −1.2 V VGS = −2.0 V, ID = −2.5 A ⎯ 31 80 VGS = −2.5 V, ID = −2.5 A ⎯ 22 30 Drain-source ON resistance RDS (ON) VGS = −4.5 V, ID = −2.5 A ⎯ 15 21 m Ω Forward transfer admittance |Yfs| VDS = −10 V, ID = −2.5 A 9 18 ⎯ S Input capacitance Ciss ⎯ 2560 ⎯ Reverse transfer capacitance Crss ⎯ 330 ⎯ Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 380 ⎯ pF Rise time tr ⎯ 5 ⎯ Turn-ON time ton ⎯ 14 ⎯ Fall time tf ⎯ 42 ⎯ Switching time Turn-OFF time toff Duty <= 1%, tw = 10 µs ⎯ 142 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 33 ⎯ Gate-source charge 1 Qgs ⎯ 10 ⎯ Gate-drain (“miller”) charge Qgd VDD ∼− −16 V,VGS = −5 V, ID = −5 A ⎯ 5.4 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ −20 A Forward voltage (diode) VDSF IDR = −5 A, VGS = 0 V ⎯ ⎯ 1.2 V VDD ∼− −10 V −5 V VGS 0 V ID = −2.5 A VOUT |
Nº de peça semelhante - TPCS8303 |
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Descrição semelhante - TPCS8303 |
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