STG8211 datasheet(3/8 Pages) SAMHOP

Nome de Peças	STG8211

Descrição Electrónicos	Dual N-Channel E nhancement Mode Field Effect Transistor

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Fabricante Electrônico	SAMHOP [SamHop Microelectronics Corp.]

Página de início	http://www.samhop.com.tw

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Parameter

S ymbol

Condition

Min Typ Max Unit

E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)

C

DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS

Diode Forward Voltage

VSD

VGS = 0V, Is =1.7A

0.75 1.2

V

b

F igure 1. Output C haracteristics

F igure 2. Transfer C haracteristics

V GS , G ate-to-S ource Voltage (V )

V DS , Drain-to-S ource Voltage (V )

20

15

10

5

0

0.5

1

1.5

2

2.5

3

25 C

15

12

9

6

3

0

-55 C

125 C

0.3

1.8

1.5

1.2

0.9

0.6

V G S =2.5V

V G S =1.5V

V G S =4V

F igure 4. On-R esistance Variation with

Drain C urrent and Temperature

2.5

2.2

1.9

1.6

1.3

1.0

0

25

50

125

T j( C )

100

75

V GS =4V

ID=5A

T j, J unction T emperature ( C )

V GS =2.5V

ID=3A

ID, Drain C urrent (A)

24

20

16

12

8

4

0

F igure 3. On-R esistance vs. Drain C urrent

and G ate V oltage

10

15

20

25

0

V GS =4V

V GS =2.5V

150

25

5

S T G 8211

Notes

c.Guaranteed by design,not subject to production testing.

b.Pulse Test:PulseWidth 300μs,Duty Cycle 2%.

＜

a.Surface Mounted on FR4 Board,t 10sec.

＜

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