STU302S datasheet(2/9 Pages) SAMHOP

Nome de Peças	STU302S

Descrição Electrónicos	N-Channel Logic Level E nhancement Mode Field Effect Transistor

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Fabricante Electrônico	SAMHOP [SamHop Microelectronics Corp.]

Página de início	http://www.samhop.com.tw

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Parameter

Symbol

Condition

Min Typ Max Unit

OFF CHAR ACTE R IS TICS

Drain-S ource Breakdown Voltage

BVDSS

=

VGS 0V, ID 250uA

=

30

V

Zero Gate Voltage Drain Current

IDSS

VDS 24V, VGS 0V

==

1

Gate-Body Leakage

IGSS

VGS

20V, VDS 0V

=

100 nA

ON CHAR ACTE R IS TICS

a

Gate Threshold Voltage

VGS(th)

VDS VGS,ID = 250uA

=

13

V

Drain-S ource On-S tate R esistance

R DS(ON)

VGS 10V, ID 20A

VGS 4.5V, ID 10A

On-S tate Drain Current

ID(ON)

VDS = 10V, VGS =10V

A

S

Forward Transconductance

FS

g

VDS 10V, ID 10A

DYNAMIC CHAR ACTE R IS TICS

b

Input Capacitance

CISS

CRSS

COSS

Output Capacitance

R everse Transfer Capacitance

VDS =15V, VGS =0V

f=1.0MHZ

P

F

P

F

P

F

S WITCHING CHAR ACTE R IS TICS

b

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

tD(ON)

tr

tD(OFF)

tf

VDD = 15V

ID =1 A

VGS = 10V

R GEN =6 ohm

ns

Total Gate Charge

Gate-S ource Charge

Gate-Drain Charge

Qg

Qgs

Qgd

VDS =15V, ID = 20A

VGS =10V

nC

C

Fall Time

=

==

2

5

uA

mohm

VDS =15V, ID =20A,VGS =10V

nC

VDS =15V, ID =20A,VGS =4.5V

50

225

325

1020

26

28

37

33

18

8.2

2.3

13

22

ohm

Rg

Gate resistance

VGS =0V, VDS = 0V, f=1.0MHZ

0.25

ELEC TR IC AL C HAR AC TE R ISTIC S (TC=25 C unless otherwise noted)

9

12

S T U/D302S

7

10

1.7

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Descrição semelhante - STU302S

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STU302S Folha de dados(PDF) 2 Page - SamHop Microelectronics Corp.

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