STU9916L datasheet(2/8 Pages) SAMHOP

Nome de Peças	STU9916L

Descrição Electrónicos	N-Channel Enhancement Mode Field Effect Transistor

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Fabricante Electrônico	SAMHOP [SamHop Microelectronics Corp.]

Página de início	http://www.samhop.com.tw

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S TU/D9916L

E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)

Parameter

Symbol

Condition

Min Typ Max Unit

OFF CHAR ACTER ISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250uA

30

V

Zero Gate Voltage Drain Current

IDSS

VDS = 24V, VGS = 0V

1

uA

Gate-Body Leakage

IGSS

VGS = 20V, VDS = 0V

nA

ON CHAR ACTER ISTICS a

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250uA

0.7

1.0

25

35

1.5

V

Drain-Source On-State R esistance

R DS(ON)

VGS = 10V, ID =20A

VGS = 4.5V, ID = 20A

30

40

On-State Drain Current

ID(ON)

VDS = 10V, VGS = 10V

A

S

Forward Transconductance

FS

g

VDS = 10V, ID = 20A

DYNAMIC CHAR ACTER ISTICS

b

Input Capacitance

CISS

CRSS

COSS

Output Capacitance

R everse Transfer Capacitance

VDs =25V, VGS = 0V

f = 1.0MHZ

P

F

P

F

P

F

SWITCHING CHAR ACTER ISTICS

b

Turn-On Delay Time

R ise Time

Turn-Off Delay Time

tD(ON)

tr

tD(OFF)

tf

Fall time

VDD = 15V,

ID =1A,

VGS = 10V,

R L = 15 ohm

R GS = 11 ohm

ns

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Qg

Qgs

Qgd

VDD = 15V, ID = 20A,

R L=0.75 ohm

nC

2

100

m ohm

nC

VDD = 15V,ID = 20A,VGS =10V

VDS = 15V,ID = 20A,VGS =4.5V

10

20

130

821

127

813

98

104

28.9

12

11.4

29

22.1

22

18.7

31

18.7

20

9.3

10

4

3.2

3.9

4

Nº de peça semelhante - STU9916L

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