1N823 datasheet(3/5 Pages) PHILIPS

Nome de Peças	1N823

Descrição Electrónicos	Voltage reference diodes

Download	5 Pages

Scroll/Zoom	100%

Fabricante Electrônico	PHILIPS [NXP Semiconductors]

Página de início	http://www.nxp.com

Logo

3 / 5 page

1996 Mar 20

3

Philips Semiconductors

Product speciﬁcation

Voltage reference diodes

1N821 to 1N829

1N821A to 1N829A

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

Notes

1. The quoted values of

∆V

ref are based on a constant current IZ. Two factors can cause ∆Vref to change, namely the

differential resistance rdif and the temperature coefficient SZ.

a) As the max. rdif of the device can be 15 Ω, a change of 0.01 mA in the current through the reference diode will

result in a

∆Vref of 0.01 mA × 15 Ω = 0.15 mV. This level of ∆Vref is not significant on a 1N821 (∆Vref < 96 mV),

it is however very significant on a 1N829 (

∆Vref < 5 mV).

b) The temperature coefficient of the reference voltage SZ is a function of IZ. Reference diodes are classified at the

specified test current and the SZ of the reference diode will be different at different levels of IZ. The absolute value

of IZ is important, however, the stability of IZ, once the level has been set, is far more significant. This applies

particularly to the 1N829. The effect of the stability of IZ on SZ is shown in Fig.3.

2. All reference diodes are characterized by the ‘box method’. This guarantees a maximum voltage excursion (

∆Vref)

over the specified temperature range, at the specified test current (IZ), verified by tests at indicated temperature

points within the range. VZ is measured and recorded at each temperature specified. The ∆Vref between the highest

and lowest values must not exceed the maximum

∆V

ref given. Therefore the temperature coefficient is only given as

a reference. It may be derived from:

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Vref

reference voltage

IZ =7.5 mA

5.89

6.20

6.51

V

∆V

ref

reference voltage excursion

IZ =7.5 mA; test points for

Tamb: −55; +25; +75; +100 °C;

see Fig.2; notes 1 and 2

1N821; 1N821A

−−

96

mV

1N823; 1N823A

−−

48

mV

1N825; 1N825A

−−

19

mV

1N827; 1N827A

−−

9mV

1N829; 1N829A

−−

5mV

S

Z

temperature coefﬁcient

IZ = 7.5 mA: see Fig.3;

notes 1 and 2

1N821; 1N821A

−−

0.01

%/K

1N823; 1N823A

−−

0.005

%/K

1N825; 1N825A

−−

0.002

%/K

1N827; 1N827A

−−

0.001

%/K

1N829; 1N829A

−−

0.0005 %/K

rdif

differential resistance

IZ = 7.5 mA; see Fig.4

1N821 to 1N829

−−

15

Ω

1N821A to 1N829A

−−

10

Ω

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

8 mm from the body

300

K/W

Rth j-a

thermal resistance from junction to ambient

lead length 10 mm

375

K/W

S

Z

V

ref1

V

ref2

–

T

amb2

T

amb1

–

--------------------------------------

100

V

ref nom

-------------------- %/K

×

=

Nº de peça semelhante - 1N823

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Motorola, Inc	1N823	36Kb / 4P	TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW
Motorola, Inc	1N823	41Kb / 3P	TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW
Compensated Deuices Inc...	1N823	97Kb / 2P	TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
Microsemi Corporation	1N823	76Kb / 2P	6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
Microsemi Corporation	1N823	78Kb / 2P	6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

More results

Descrição semelhante - 1N823

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
NXP Semiconductors	BZV10	26Kb / 5P	Voltage reference diodes 1996 Mar 21
NXP Semiconductors	BZV80	20Kb / 4P	Voltage reference diodes 1996 Mar 21
New Jersey Semi-Conduct...	BZV10	243Kb / 4P	VOLTAGE REFERENCE DIODES
Motorola, Inc	LM285	110Kb / 7P	MICROPOWER VOLTAGE REFERENCE DIODES
ON Semiconductor	LM385Z-25G	102Kb / 9P	Micropower Voltage Reference Diodes March, 2008 - Rev. 8
	LM285	88Kb / 9P	Micropower Voltage Reference Diodes November, 2005 ??Rev. 7
	LM285	79Kb / 8P	Micropower Voltage Reference Diodes March, 2008 - Rev. 8
	LM285	114Kb / 9P	Micropower Voltage Reference Diodes March, 2008 - Rev. 8
	LM385D-25R2G	102Kb / 9P	Micropower Voltage Reference Diodes March, 2008 - Rev. 8
	LM385D-25R2	102Kb / 9P	Micropower Voltage Reference Diodes March, 2008 - Rev. 8

More results

1N823 Folha de dados(PDF) 3 Page - NXP Semiconductors

1N823 Folha de dados(HTML) 3 Page - NXP Semiconductors

Nº de peça semelhante - 1N823

Descrição semelhante - 1N823

Html Pages

1 2 3 4 5

Folha de dados Download

Ligação URL