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SI7401DN Folha de dados(PDF) 2 Page - Vishay Siliconix |
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SI7401DN Folha de dados(HTML) 2 Page - Vishay Siliconix |
2 / 3 page SPICE Device Model Si7401DN Vishay Siliconix www.vishay.com Document Number: 71638 2 31-May-01 SPECIFICATIONS (TJ = 25 °C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = − 2mA 0.73 V On-State Drain Current a ID(on) VDS = − 5V, VGS = − 4.5 V 171 A VGS = − 4.5V, ID = − 11A 0.015 0.017 VGS = − 2.5V, ID = − 9.8A 0.021 0.022 Drain-Source On-State Resistance a rDS(on) VGS = − 1.8V, ID = − 2A 0.027 0.027 Ω Forward Transconductance a gfs VDS = − 15V, ID = − 11A 33 31 S Diode Forward Voltage a VSD IS = − 3.2A, VGS = 0V - 0.83 - 0.8 V Dynamic b Total Gate Charge Qg 33 29 Gate-Source Charge Qgs 5.9 5.9 Gate-Drain Charge Qgd VDS = − 10V, VGS = − 4.5V, ID = − 11A 5.2 5.2 nC Turn-On Delay Time td(on) 34 23 Rise Time tr 42 45 Turn-Off Delay Time td(off) 52 130 Fall Time tf VDD = − 10V, RL = 10Ω ID ≅ − 1A, VGEN = − 4.5V, RG = 6Ω 78 95 Source-Drain Reverse Recovery Time trr IF = − 3.2A, di/dt = 100 A/µs 30 30 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. |
Nº de peça semelhante - SI7401DN |
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Descrição semelhante - SI7401DN |
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