SI7401DN datasheet(2/3 Pages) VISHAY

Nome de Peças	SI7401DN

Descrição Electrónicos	P-Channel 20-V (D-S) MOSFET

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Fabricante Electrônico	VISHAY [Vishay Siliconix]

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SPICE Device Model Si7401DN

Vishay Siliconix

www.vishay.com

Document Number: 71638

2

31-May-01

SPECIFICATIONS (TJ = 25

°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID =

− 2mA

0.73

V

On-State Drain Current

a

ID(on)

VDS =

− 5V, VGS = − 4.5 V

171

A

VGS =

− 4.5V, ID = − 11A

0.015

0.017

VGS =

− 2.5V, ID = − 9.8A

0.021

0.022

Drain-Source On-State Resistance

a

rDS(on)

VGS =

− 1.8V, ID = − 2A

0.027

Ω

Forward Transconductance

a

gfs

VDS =

− 15V, ID = − 11A

33

31

S

Diode Forward Voltage

a

VSD

IS =

− 3.2A, VGS = 0V

- 0.83

- 0.8

V

Dynamic

b

Total Gate Charge

Qg

33

29

Gate-Source Charge

Qgs

5.9

Gate-Drain Charge

Qgd

VDS =

− 10V, VGS = − 4.5V, ID = − 11A

5.2

nC

Turn-On Delay Time

td(on)

34

23

Rise Time

tr

42

45

Turn-Off Delay Time

td(off)

52

130

Fall Time

tf

VDD =

− 10V, RL = 10Ω

ID

≅ − 1A, VGEN = − 4.5V, RG = 6Ω

78

95

Source-Drain Reverse Recovery Time

trr

IF =

− 3.2A, di/dt = 100 A/µs

30

ns

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

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