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GS8150V18AB-333 Folha de dados(PDF) 1 Page - GSI Technology

Nome de Peças GS8150V18AB-333
Descrição Electrónicos  1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM
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Fabricante Electrônico  GSI [GSI Technology]
Página de início  http://www.gsitechnology.com
Logo GSI - GSI Technology

GS8150V18AB-333 Folha de dados(HTML) 1 Page - GSI Technology

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GS8150V18/36AB-357/333/300/250
1M x 18, 512K x 36
18Mb Register-Register Late Write SRAM
250 MHz–357 MHz
1.8
V VDD
1.5 V or 1.8 V HSTL I/O
119-Bump BGA
Commercial Temp
Industrial Temp
Rev: 1.04 4/2005
1/25
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Features
• Register-Register Late Write mode, Pipelined Read mode
• 1.8 V +150/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• ZQ controlled programmable output drivers
• Dual Cycle Deselect
• Fully coherent read and write pipelines
• Byte write operation (9-bit bytes)
• Differential HSTL clock inputs, K and K
• Asynchronous output enable
• Sleep mode via ZZ
• IEEE 1149.1 JTAG-compliant Serial Boundary Scan
• JEDEC-standard 119-bump BGA package
• Pb-Free 119-bump BGA package available
Family Overview
GS8150V18/36A are 18,874,368-bit (18Mb) high
performance SRAMs. This family of wide, very low voltage
HSTL I/O SRAMs is designed to operate at the speeds needed
to implement economical high performance cache systems.
Functional Description
Because GS8150V18/36A are synchronous devices, address
data inputs and read/write control inputs are captured on the
rising edge of the input clock. Write cycles are internally self-
timed and initiated by the rising edge of the clock input. This
feature eliminates complex off-chip write pulse generation
required by asynchronous SRAMs and simplifies input signal
timing.
GS8150V18/36A support pipelined reads utilizing a rising-
edge-triggered output register. They also utilize a Dual Cycle
Deselect (DCD) output deselect protocol.
GS8150V18/36A are implemented with high performance
HSTL technology and are packaged in a 119-bump BGA.
Mode Control
There are two mode control select pins (M1 and M2), which
allow the user to set the correct read protocol for the design.
The GS8150V18/36A support single clock Pipeline mode,
which directly affects the two mode control select pins. In
order for the part to fuction correctly, and as specified, M1
must be tied to VSS and M2 must be tied to VDD or VDDQ.
This must be set at power-up and should not be changed during
operation.
Sleep Mode
Low power (Sleep mode) is attained through the assertion (High)
of the ZZ signal, or by stopping the clock (CK). Memory data is
retained during Sleep mode.
Parameter Synopsis
-357
-333
-300
-250
Unit
Pipeline
Cycle
tKHQV
2.8
1.4
3.0
1.5
3.3
1.6
4.0
2.0
ns
ns
Curr (x18)
Curr (x36)
600
650
550
600
500
550
450
500
mA
mA


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