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GS8160Z18T-225 Folha de dados(PDF) 1 Page - GSI Technology |
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GS8160Z18T-225 Folha de dados(HTML) 1 Page - GSI Technology |
1 / 24 page GS8160Z18/36T-250/225/200/166/150/133 18Mb Pipelined and Flow Through Synchronous NBT SRAM 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Commercial Temp Industrial Temp Rev: 2.17 11/2004 1/24 © 1998, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Features • NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus utilization; Fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply • User-configurable Pipeline and Flow Through mode • LBO pin for Linear or Interleave Burst mode • Pin compatible with 2M, 4M, and 8M devices • Byte write operation (9-bit Bytes) • 3 chip enable signals for easy depth expansion • ZZ Pin for automatic power-down • JEDEC-standard 100-lead TQFP package Functional Description The GS8160Z18/36T is an 18Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the input clock. Burst order control (LBO) must be tied to a power rail for proper operation. Asynchronous inputs include the Sleep mode enable (ZZ) and Output Enable. Output Enable can be used to override the synchronous control of the output drivers and turn the RAM's output drivers off at any time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off- chip write pulse generation required by asynchronous SRAMs and simplifies input signal timing. The GS8160Z18/36T may be configured by the user to operate in Pipeline or Flow Through mode. Operating as a pipelined synchronous device, meaning that in addition to the rising edge triggered registers that capture input signals, the device incorporates a rising-edge-triggered output register. For read cycles, pipelined SRAM output data is temporarily stored by the edge triggered output register during the access cycle and then released to the output drivers at the next rising edge of clock. The GS8160Z18/36T is implemented with GSI's high performance CMOS technology and is available in a JEDEC- Standard 100-pin TQFP package. Parameter Synopsis -250 -225 -200 -166 -150 -133 Unit Pipeline 3-1-1-1 tKQ tCycle 2.5 4.0 2.7 4.4 3.0 5.0 3.4 6.0 3.8 6.7 4.0 7.5 ns ns 3.3 V Curr (x18) Curr (x32/x36) 280 330 255 300 230 270 200 230 185 215 165 190 mA mA 2.5 V Curr (x18) Curr (x32/x36) 275 320 250 295 230 265 195 225 180 210 165 185 mA mA Flow Through 2-1-1-1 tKQ tCycle 5.5 5.5 6.0 6.0 6.5 6.5 7.0 7.0 7.5 7.5 8.5 8.5 ns ns 3.3 V Curr (x18) Curr (x32/x36) 175 200 165 190 160 180 150 170 145 165 135 150 mA mA 2.5 V Curr (x18) Curr (x32/x36) 175 200 165 190 160 180 150 170 145 165 135 150 mA mA |
Nº de peça semelhante - GS8160Z18T-225 |
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Descrição semelhante - GS8160Z18T-225 |
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