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74ABT652AN Folha de dados(PDF) 4 Page - NXP Semiconductors |
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74ABT652AN Folha de dados(HTML) 4 Page - NXP Semiconductors |
4 / 8 page Philips Semiconductors Product specification 74ABT652A Octal transceiver/register, non-inverting (3-State) 1995 Apr 19 4 LOGIC DIAGRAM 1D C1 Q 19 18 17 16 15 14 13 B1 B2 B3 B4 B5 B6 B7 5 6 7 8 9 10 11 A1 A2 A3 A4 A5 A6 A7 DETAIL A X 7 OEBA OEAB CPBA SBA CPAB SAB 21 3 23 22 1 2 20 B0 1D C1 Q 4 A0 1of 8 Channels SA00098 ABSOLUTE MAXIMUM RATINGS1, 2 SYMBOL PARAMETER CONDITIONS RATING UNIT VCC DC supply voltage –0.5 to +7.0 V IIK DC input diode current VI < 0 –18 mA VI DC input voltage3 –1.2 to +7.0 V IOK DC output diode current VO < 0 –50 mA VOUT DC output voltage3 output in Off or High state –0.5 to +5.5 V IOUT DC output current output in Low state 128 mA Tstg Storage temperature range –65 to 150 °C NOTES: 1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150 °C. 3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. |
Nº de peça semelhante - 74ABT652AN |
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Descrição semelhante - 74ABT652AN |
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