IKP15N60T datasheet(3/13 Pages) INFINEON

Nome de Peças	IKP15N60T

Descrição Electrónicos	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

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IKP15N60T

TrenchStop Series

q

Power Semiconductors

3

Rev. 2.1 May 06

Switching Characteristic, Inductive Load, at Tj=25 °C

Value

Parameter

Symbol

Conditions

min.

Typ.

max.

Unit

IGBT Characteristic

Turn-on delay time

td(on)

-

17

-

Rise time

tr

-

11

-

Turn-off delay time

td(off)

-

188

-

Fall time

tf

-

50

-

ns

Turn-on energy

Eon

-

0.22

-

Turn-off energy

Eoff

-

0.35

-

Total switching energy

Ets

Tj=25°C,

VCC=400V,IC=15A,

VGE=0 /15V,

RG=15Ω,

Lσ

1) =154nH,

Cσ

1) =39pF

Energy losses include

“tail” and diode

reverse recovery.

-

0.57

-

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time

trr

-

34

-

ns

Diode reverse recovery charge

Qrr

-

0.24

-

µC

Diode peak reverse recovery current

Irrm

-

10.4

-

A

Diode peak rate of fall of reverse

recovery current during tb

dirr/dt

Tj=25°C,

VR=400V, IF=15A,

diF/dt=825A/µs

-

718

-

A/

µs

Switching Characteristic, Inductive Load, at Tj=175 °C

Value

Parameter

Symbol

Conditions

min.

Typ.

max.

Unit

IGBT Characteristic

Turn-on delay time

td(on)

-

17

-

Rise time

tr

-

15

-

Turn-off delay time

td(off)

-

212

-

Fall time

tf

-

79

-

ns

Turn-on energy

Eon

-

0.34

-

Turn-off energy

Eoff

-

0.47

-

Total switching energy

Ets

Tj=175°C,

VCC=400V,IC=15A,

VGE=0/15V,

RG= 15 Ω

Lσ

1) =154nH,

Cσ

1) =39pF

Energy losses include

“tail” and diode

reverse recovery.

-

0.81

-

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time

trr

-

140

-

ns

Diode reverse recovery charge

Qrr

-

1.0

-

µC

Diode peak reverse recovery current

Irrm

-

14.7

-

A

Diode peak rate of fall of reverse

recovery current during tb

dirr/dt

Tj=175°C

VR=400V, IF=15A,

diF/dt=825A/µs

-

495

-

A/

µs

1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

Nº de peça semelhante - IKP15N60T

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Infineon Technologies A...	IKP15N60T	460Kb / 14P	Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology Rev. 2.2 Sep. 07
	IKP15N60T	516Kb / 13P	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.5 11.05.2015
	IKP15N60T	460Kb / 14P	Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology Rev. 2.2 Sep. 07
	IKP15N60T	516Kb / 13P	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.5 11.05.2015

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Descrição semelhante - IKP15N60T

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