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SZP-3026Z Folha de dados(PDF) 1 Page - SIRENZA MICRODEVICES

Nome de Peças SZP-3026Z
Descrição Electrónicos  3.0-3.8GHz 2W InGaP Amplifier
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Fabricante Electrônico  SIRENZA [SIRENZA MICRODEVICES]
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SZP-3026Z Folha de dados(HTML) 1 Page - SIRENZA MICRODEVICES

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The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product
for use in life-support devices and/or systems.
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1
EDS-104666 Rev D
Preliminary
Sirenza Microdevices’ SZP-3026Z is a high linearity single
stage class AB Heterojunction Bipolar Transistor (HBT)
amplifier housed in a proprietary surface-mountable plastic
encapsulated package. This HBT amplifier is made with
InGaP on GaAs device technology and fabricated with
MOCVD for an ideal combination of low cost and high reli-
ability.
This product is specifically designed as a flexible final or
driver stage for 802.16 equipment in the 3.0-3.8GHz bands.
It can run from a 3V to 6V supply. It is prematched to ~5
ohms on the input for broadband performance and ease of
matching at the board level. It features an output power
detector, on/off power control, ESD protection, excellent
overall robustness and a proprietary hand reworkable and
thermally enhanced SOF-26 package. This product fea-
tures a RoHS Compliant and Green package with matte tin
finish, designated by the ‘Z’ suffix.
Key Specifications
Symbol
Parameters: Test Conditions, 3.4-3.6GHz, 5V App circuit,
Z0 = 50Ω, VCC = 5.0V, Iq = 385mA, TBP = 30ºC
Unit
Min.
Typ.
Max.
fO
Frequency of Operation
MHz
3000
3800
P1dB
Output Power at 1dB Compression – 3.5GHz
dBm
31.7
33.2
S21
Small Signal Gain – 3.5GHz
dB
10.5
12.0
Pout
Output power at 2.5% EVM 802.11g 54Mb/s - 3.5GHz
dBm
26.0
IM3
Third Order Suppression (Pout=23dBm per tone) - 3.5GHz
dBc
-43
-40
NF
Noise Figure at 3.5GHz
dB
5.1
IRL
Worst Case Input Return Loss 3.4-3.6GHz
dB
14
18
ORL
Worst Case Output Return Loss 3.4-3.6GHz
7
10
Vdet Range
Output Voltage Range for Pout=10dBm to 33dBm
V
0.9 to 2.2
Icq
Quiescent Current (Vcc = 5V)
mA
347
385
424
IVPC
Power Up Control Current (Vpc=5V)
mA
2.3
Ileak
Vcc Leakage Current (Vcc = 5V, Vpc = 0V)
μA10
Rth, j-l
Thermal Resistance (junction - lead)
ºC/W
12
Functional Block Diagram
SZP-3026Z
3.0-3.8GHz 2W InGaP Amplifier
Product Features
Applications
P1dB = 33.6dBm @ 5V
802.11g 54Mb/s Class AB Performance
Pout = 26dBm @ 2.5% EVM, Vcc 5V, 570mA
Pout = 27dBm @ 2.5% EVM, Vcc 6V, 513mA
On-chip Output Power Detector
Input Prematched to ~5 ohms
Proprietary Low Thermal Resistance Package
Hand Solderable and Easy Rework
Power up/down control < 1μs
802.16 WiMAX Driver or Output Stage
WLL
Product Description
Proprietary SOF-26 Package
Active
Bias
RFIN
RFOUT
Power
Detector
Vbias = 5V
Power
Up/Dow n
Control
Vcc = 5V
SZP-3026
Pb
RoHS Compliant
&
Package
Green


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