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WV3HG64M64EEU403D6MG Folha de dados(PDF) 6 Page - White Electronic Designs Corporation |
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WV3HG64M64EEU403D6MG Folha de dados(HTML) 6 Page - White Electronic Designs Corporation |
6 / 11 page WV3HG64M64EEU-D6 December 2005 Rev. 0 ADVANCED 6 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs DDR2 ICC SPECIFICATIONS AND CONDITIONS Symbol Proposed Conditions 806 665 534 403 Units ICC0* Operating one bank active-precharge current; tCK = tCK(ICC), tRC = tRC(ICC), tRAS = tRASmin(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING TBD TBD 800 760 mA ICC1* Operating one bank active-read-precharge current; IOUT = 0mA; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRC = tRC (ICC), tRAS = tRAS MIN(ICC), tRCD = tRCD(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as ICC4W TBD TBD 880 800 mA ICC2P** Precharge power-down current; All banks idle; tCK = tCK(ICC); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING TBD TBD 64 64 mA ICC2Q** Precharge quiet standby current; All banks idle; tCK = tCK(ICC); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING TBD TBD 200 200 mA ICC2N** Precharge standby current; All banks idle; tCK = tCK(ICC); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING TBD TBD 240 240 mA ICC3P** Active power-down current; All banks open; tCK = tCK(ICC); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING Fast PDN Exit MRS(12) = 0 TBD TBD 240 240 mA Slow PDN Exit MRS(12) = 1 TBD TBD 120 120 mA ICC3N** Active standby current; All banks open; tCK = tCK(ICC), tRC = tRC(ICC), tRAS = tRAS MIN(ICC); CKE is HIGH, CS# is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING TBD TBD 560 520 mA ICC4W** Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRAS = tRAS MAX(ICC), tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING TBD TBD 1600 1160 mA ICC4R* Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRAS = tRAS MAX(ICC), tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as ICC4W TBD TBD 1440 1160 mA ICC5B** Burst auto refresh current; tCK = tCK(ICC); Refresh command at every tRFC(ICC) interval; CKE is HIGH, CS# is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING TBD TBD 1560 1480 mA ICC6* Self refresh current; CK and CK# at 0V; CKE 0.2V; Other control and address bus inputs are FLOATING; Data bus inputs are FLOATING Normal TBD TBD 44 44 mA ICC7* Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(ICC), AL = tRCD(ICC)-1*tCK(ICC); tCK = tCK(ICC), tRC = tRC(ICC), tRRD = tRRD(ICC), tRCD = 1*tCK(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data bus inputs are switching. TBD TBD 2200 2160 mA * Value calculated as one module rank in thes operating condition, and all other module ranks in ICC2P (CKE LOW) mode. ** Value calculated reflects all module ranks in this operating condition NOTES: • ICC specifications were calculated using SAMSUNG components. Other manufactures DRAMs may have different values. |
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