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BC337-40 Folha de dados(PDF) 2 Page - ON Semiconductor

Nome de Peças BC337-40
Descrição Electrónicos  Amplifier Transistors
Download  6 Pages
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Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BC337-40 Folha de dados(HTML) 2 Page - ON Semiconductor

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BC337, BC337−16, BC337−25, BC337−40, BC338−25
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
BC337
BC338
V(BR)CE
O
45
25
Vdc
Collector − Emitter Breakdown Voltage
(IC = 100 mA, IE = 0)
BC337
BC338
V(BR)CE
S
50
30
Vdc
Emitter − Base Breakdown Voltage
(IE = 10 mA, IC = 0)
V(BR)EB
O
5.0
Vdc
Collector Cutoff Current
(VCB = 30 V, IE = 0)
BC337
(VCB = 20 V, IE = 0)
BC338
ICBO
100
100
nAdc
Collector Cutoff Current
(VCE = 45 V, VBE = 0)
BC337
(VCE = 25 V, VBE = 0)
BC338
ICES
100
100
nAdc
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
IEBO
100
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
BC337
BC337−16
BC337−25/BC338−25
BC337−40
(IC = 300 mA, VCE = 1.0 V)
hFE
100
100
160
250
60
630
250
400
630
Base−Emitter On Voltage
(IC = 300 mA, VCE = 1.0 V)
VBE(on)
1.2
Vdc
Collector − Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
VCE(sat)
0.7
Vdc
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Cob
15
pF
Current − Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
fT
210
MHz
Figure 1. Thermal Response
t, TIME (SECONDS)
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
qJC(t) = (t) qJC
qJC = 100°C/W MAX
qJA(t) = r(t) qJA
qJA = 375°C/W MAX
D CURVES APPLY FOR
POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
t1
t2
P(pk)
DUTY CYCLE, D = t1/t2
SINGLE PULSE


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