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STB20PF75 Folha de dados(PDF) 2 Page - STMicroelectronics

Nome de Peças STB20PF75
Descrição Electrónicos  P-CHANNEL 75V - 0.10 ??- 20A D짼PAK STripFET??II POWER MOSFET
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB20PF75 Folha de dados(HTML) 2 Page - STMicroelectronics

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STB20PF75
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THERMAL DATA
(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
ON (*)
DYNAMIC
Rthj-case
Rthj-PCB
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-PCB
Maximum Lead Temperature For Soldering Purpose
(1.6 mm from case, for 10 sec)
Max
Max
Typ
1.88
34
300
°C/W
°C/W
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
75
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = 250 µA
23
4
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
ID = 10 A
0.10
0.12
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs
Forward Transconductance
VDS = 15 V
ID =10 A
15
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
1150
170
70
pF
pF
pF


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