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74LVT623DB Folha de dados(PDF) 3 Page - NXP Semiconductors

Nome de Peças 74LVT623DB
Descrição Electrónicos  3.3 V octal transceiver with dual enable 3-State
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74LVT623DB Folha de dados(HTML) 3 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
74LVT623
3.3 V octal transceiver with dual enable (3-State)
1999 Jul 09
3
LOGIC SYMBOL (IEEE/IEC)
EN1
EN1
1
2
SA00196
1
19
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
PIN DESCRIPTION
PIN NUMBER
SYMBOL
NAME AND FUNCTION
1
OEAB
Output enable input, A side to B
side (active-High)
2, 3, 4, 5,
6, 7, 8, 9
A0 – A7
Data inputs/outputs (A side)
18, 17, 16, 15,
14, 13, 12, 11
B0 – B7
Data inputs/outputs (B side)
19
OEBA
Output enable input, B side to A
side (active-Low)
10
GND
Ground (0 V)
20
VCC
Positive supply voltage
FUNCTION TABLE
INPUTS
INPUTS/OUTPUTS
OEBA
OEAB
An
Bn
L
L
An = Bn
Inputs
H
H
Inputs
Bn = An
H
L
Z
Z
L
H
An = Bn
Bn = An
H = High voltage level
L
= Low voltage level
Z = High impedance “off” state
ABSOLUTE MAXIMUM RATINGS1, 2
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VCC
DC supply voltage
–0.5 to +4.6
V
IIK
DC input diode current
VI < 0
–50
mA
VI
DC input voltage3
–0.5 to +7.0
V
IOK
DC output diode current
VO < 0
–50
mA
VOUT
DC output voltage3
Output in Off or High state
–0.5 to +7.0
V
IO
DC output current
Output in Low state
128
mA
IOUT
DC output current
Output in High state
–64
mA
Tstg
Storage temperature range
–65 to 150
°C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150
°C.
3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.


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