BAP64-06 datasheet(3/7 Pages) PHILIPS

Nome de Peças	BAP64-06

Descrição Electrónicos	Silicon PIN diode

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Fabricante Electrônico	PHILIPS [NXP Semiconductors]

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3 / 7 page

1999 Dec 17

3

Philips Semiconductors

Preliminary specification

Silicon PIN diode

BAP64-06

ELECTRICAL CHARACTERISTICS

Tj = 25

°C unless otherwise specified.

Note

1.

Guaranteed on AQL basis: inspection level S4, AQL 1.0.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Per diode

VF

forward voltage

IF =50mA

0.95

1.1

V

IR

reverse current

VR = 175 V

−

10

µA

VR =20 V

−

1

µA

Cd

diode capacitance

VR = 0; f = 1 MHz

0.52

−

pF

VR = 1 V; f = 1 MHz

0.37

−

pF

VR = 20 V; f = 1 MHz

0.23

0.35

pF

rD

diode forward resistance

IF = 0.5 mA; f = 100 MHz; note 1

20

40

Ω

IF = 1 mA; f = 100 MHz; note 1

10

20

Ω

IF = 10 mA; f = 100 MHz; note 1

2

3.8

Ω

IF = 100 mA; f = 100 MHz; note 1

0.7

1.35

Ω

τL

charge carrier life time

when switched from IF =10mA to

IR =6mA; RL = 100

Ω;

measured at IR =3 mA

1.55

−µs

LS

series inductance

1.4

−

nH

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

220

K/W

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BAP64-06 Folha de dados(PDF) 3 Page - NXP Semiconductors

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Nº de peça semelhante - BAP64-06

Descrição semelhante - BAP64-06

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